Abstract:Group-IV tellurides have exhibited exotic band structures. Specifically, despite the fact that Sn sits between Ge and Pb in the same column of the periodic table, cubic SnTe is a topological crystalline insulator with band inversion, but both isovalent GeTe and PbTe are trivial semiconductors with normal band order. By performing first-principles band structure calculations, we unravel the origin of this abnormal behaviour by using symmetry analysis and the atomic orbital energy levels and atomic sizes of these elements. In group-IV tellurides, the s lone pair band of the group-IV element is allowed by symmetry to couple with the anion valence p band at the L -point, and such s–p coupling leads to the occurrence of bandgap at the L -point. We find that such s–p coupling is so strong in SnTe that it inverts the band order near the bandgap; however, it is not strong enough in both GeTe and PbTe, so they remain normal semiconductors. The reason for this is the incomplete screening of the core of the relatively tight-binding Ge 4s orbital by its 3d orbitals and the large atomic size and strong relativistic effect in Pb, respectively. Interestingly, we also find that the rhombohedral distortion removes the inversion symmetry and the reduced s–p coupling transforms the α -SnTe back to a normal semiconductor. Our study demonstrates that, in addition to spin–orbital coupling, strain and interface dipole fields, inter-orbital coupling is another effective way to engineer the topological insulators.

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Anisotropic to Isotropic Transition in Monolayer Group-IV Tellurides

Atomic Disordering Advances Thermoelectric Group IV Telluride Alloys with a Multiband Transport

Topological Insulators with Unexpectedly HgTe-like Band Inversion in Hexagonal Wurtzite-Type Binary Compounds

Band gap anomaly and topological properties in lead chalcogenides

Observation of Topological Crystalline Insulator phase in the lead tin chalcogenide Pb1-xSnxTe material class

Crystal Field Effect Induced Topological Crystalline Insulators In Monolayer IV-VI Semiconductors

Observation of a Topological Crystalline Insulator Phase and Topological Phase Transition in Pb1−xSnxTe

Topological Crystalline Insulators in the SnTe Material Class

On The Influence Of Tetrahedral Covalent-Hybridization On Electronic Band Structure Of Topological Insulators From First Principles

Atomic Disorders in Layer Structured Topological Insulator SnBi 2 Te 4 Nanoplates

Double band inversion in the topological phase transition of Ge1-xSnx alloys

Band Structure Engineering of Multinary Chalcogenide Topological Insulators

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Topological Phase Transition with Nanoscale Inhomogeneity in (Bi_1-Xin_x)_2se_3

Possible Topological Superconductivity in a Topological Crystalline Insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te

Disorder Enabled Band Structure Engineering of a Topological Insulator Surface

Abnormal Physics of Group-Iitelluride System: Valence Contribution of D Electrons

Predication of topological states in the allotropes of group-IV elements

Topological Phase Transition With Nanoscale Lnhomogeneity In (Bi1-&Itx&Itin&Itx&It)(2)Se-3

Topological Dirac states in a layered telluride TaPdTe 5 with quasi-one-dimensional PdTe 2 chains