Van Hove Singularity Arising from Mexican-hat-shaped Inverted Bands in the Topological Insulator Sn-doped Bi1.1Sb0.9Te2S

Wenchao Jiang,Bowen Li,Xiaomeng Wang,Guanyu Chen,Tong Chen,Ying Xiang,Wei Xie,Yaomin Dai,Xiyu Zhu,Huan Yang,Jian Sun,Hai-Hu Wen
DOI: https://doi.org/10.1103/physrevb.101.121115
2020-01-01
Abstract:The optical properties of Sn-doped Bi_1.1Sb_0.9Te_2S, the most bulk-insulating topological insulator thus far, have been examined at different temperatures over a broad frequency range. No Drude response is detected in the low-frequency range down to 30 cm^-1, corroborating the excellent bulk-insulating property of this material. Intriguingly, we observe a sharp peak at about 2 200 cm^-1 in the optical conductivity at 5 K. Further quantitative analyses of the line shape and temperature dependence of this sharp peak, in combination with first-principles calculations, suggest that it corresponds to a van Hove singularity arising from Mexican-hat-shaped inverted bands. Such a van Hove singularity is a pivotal ingredient of various strongly correlated phases.
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