Pressure-induced Topological Insulator-to-metal Transition and Superconductivity in Sn-doped Bi1.1Sb0.9T

Chao An,Xuliang Chen,Bin Wu,Yonghui Zhou,Ying Zhou,Ranran Zhang,Changyong Park,Fengqi Song,Zhaorong Yang
DOI: https://doi.org/10.1103/physrevb.97.174516
2018-01-01
Abstract:Tetradymite-type topological insulator Sn-doped $\mathrm{B}{\mathrm{i}}_{1.1}\mathrm{S}{\mathrm{b}}_{0.9}\mathrm{T}{\mathrm{e}}_{2}\mathrm{S}$ (Sn-BSTS), with a surface state Dirac point energy well isolated from the bulk valence and conduction bands, is an ideal platform for studying the topological transport phenomena. Here, we present high-pressure transport studies on single-crystal Sn-BSTS, combined with Raman scattering and synchrotron x-ray diffraction measurements. Over the studied pressure range of 0.7--37.2 GPa, three critical pressure points can be observed: (i) At $\ensuremath{\sim}9$ GPa, a pressure-induced topological insulator-to-metal transition is revealed due to closure of the bulk band gap, which is accompanied by changes in slope of the Raman frequencies and a minimum in $c$/$a$ within the pristine rhombohedral structure ($R\text{\ensuremath{-}}3m$); (ii) at $\ensuremath{\sim}13$ GPa, superconductivity is observed to emerge, along with the $R\text{\ensuremath{-}}3m$ to a $C2$/$c$ (monoclinic) structural transition; (iii) at $\ensuremath{\sim}24$ GPa, the superconducting transition onset temperature ${T}_{\mathrm{C}}$ reaches a maximum of $\ensuremath{\sim}12\phantom{\rule{0.16em}{0ex}}\mathrm{K}$, accompanied by a second structural transition from the $C2$/$c$ to a body-centered cubic $Im\text{\ensuremath{-}}3m$ phase.
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