Oscillating Planar Hall Response in Bulk Crystal of Topological Insulator Sn Doped Bi1.1Sb0.9Te2S

Bin Wu,Xing-Chen Pan,Wenkai Wu,Fucong Fei,Bo Chen,Qianqian Liu,Haijun Bu,Lu Cao,Fengqi Song,Baigeng Wang
DOI: https://doi.org/10.1063/1.5031906
IF: 4
2018-01-01
Applied Physics Letters
Abstract:We report the low-temperature magneto-transport in the bulk-insulating single crystal of topological insulator Sn doped Bi1.1Sb0.9Te2S. The Shubnikov-de Haas oscillations appear with their reciprocal frequency proportional to cos/theta , demonstrating the dominant transport of topological surface states. While the magnetic field is rotating in the sample surface, the planar Hall effect arises with sizeable oscillations following a relation of cos/theta sin/theta . Its amplitude reaches the maximum at the lowest temperature and drops to nearly zero at the temperature higher than 100 K. All these evidences consolidate such planar Hall oscillations as a new golden criterion on the topological surface transport.
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