Stacking-layer-tuned Topological Phases in M2Bi2Te5 (M = Ge, Sn, Pb) Films

Yue Li,Yujin Jia,Bao Zhao,Hairui Bao,Hao Huan,Hongming Weng,Zhongqin Yang
DOI: https://doi.org/10.1103/physrevb.108.085428
IF: 3.7
2023-01-01
Physical Review B
Abstract:With first-principles calculations and theoretical models, we reveal the connection between stacking order, film thickness, and topological behaviors in layered M2Bi2Te5 (M = Ge, Sn, Pb) films. We find that single-layer M2Bi2Te5 is a topologically trivial indirect band-gap semiconductor. The stacking order drastically tunes the topological property for bilayer M2Bi2Te5. In the most stable AB stacking order, bilayer Pb2Bi2Te5 is a quantum spin Hall (QSH) insulator with a large band gap of 111.6 meV, accessible for experimental observation. Upon changing the stacking order, one can achieve topological phase transitions between nontrivial and trivial states due to the distinct interlayer coupling. Peculiarly, the multilayer Pb2Bi2Te5 film exhibits topological oscillation effect as the film thickness increases from one to six layers. A simplified model Hamiltonian with nearest-neighbor interlayer coupling has been proposed to understand this oscillation. In this paper, we provide a material platform for the realization of controllable topological states, which might stimulate potential applications of topological effects.
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