Mechanisms of nucleation and post-nucleation of bismuth tri-iodide onto graphene substrates

Laura Fornaro,Camila Maidana,Heinkel Bentos Pereira,Ana Noguera,Alvaro Olivera
DOI: https://doi.org/10.1016/j.jcrysgro.2024.127611
IF: 1.8
2024-02-09
Journal of Crystal Growth
Abstract:In recent years, there has been a large amount of reports related to non-classical crystal nucleation, which does not follow the established classical nucleation theory (CNT). The same applies to the various paths that nucleated entities follow during their post-growth, which also turn out to be non-classical. The majority of these studies focus on homogeneous nucleation in liquid–solid systems, with only a few addressing heterogeneous nucleation and vapor-based nucleation. This work investigates heterogeneous nucleation and post-nucleation of BiI 3 on graphene. Nucleation, examined on grids and characterized by high-resolution transmission electron microscopy (HR-TEM), yields metastable entities that transition from amorphous to crystalline and vice versa, thus following a non-classical mechanism. These entities aggregate through "oriented attachment" and "amorphous addition", both non-classical mechanisms. These findings are compared with results obtained by nucleation on amorphous carbon grids. The non-classical heterogeneous nucleation of BiI 3 appears similar on both a graphene substrate and an amorphous carbon substrate, especially in its initial stage of amorphous precursor. The graphene substrate is not essential for non-classical nucleation, although its flat hexagonal honeycomb cell structure favors nucleation and orientation with I-Bi-I planes parallel to that honeycomb. These results align with non-classical nucleation and post-nucleation theories. Since they pertain to a vapor–solid system and heterogeneous nucleation, we hope they contribute to the development of a comprehensive general theory of these phenomena, which is still pending.
materials science, multidisciplinary,physics, applied,crystallography
What problem does this paper attempt to address?