Bismuth tri-iodide – Graphene 2D material
Laura Fornaro,Camila Maidana,Heinkel Bentos Pereira,Ana Noguera,Alvaro Olivera
DOI: https://doi.org/10.1016/j.jcrysgro.2024.127738
IF: 1.8
2024-05-04
Journal of Crystal Growth
Abstract:In recent years, a multitude of 2D materials has been extensively studied, and new ones continue to emerge. Among these, bismuth tri-iodide-graphene material has been reported in both theoretical and experimental studies, displaying intriguing properties. These findings suggest potential photovoltaic applications for BiI 3 layers and van der Waals superstructures. In this context, the present work explores the growth of van der Waals superstructures BiI 3 –graphene, obtained through physical vapor deposition. These structures are achieved by nucleating BiI 3 and allowing it to grow on graphene-covered TEM grids and ultra-flat silicon substrates. When the structures are directly grown on grids and substrates covered with graphene, twisted BiI 3 structures are formed, leading to Moiré interference, indicating the presence of two or more BiI 3 layers and non-uniformity. However, when the structures are grown on grids pre-treated with UV/O 3 , and then subjected to annealing and post-growth, they become more uniform and aligned, without observable twisting. Structures obtained on substrates with this treatment and post-growth result in thinner layers, as thin as 7.59 ± 0.16 nm, with a roughness of 0.435 ± 0.018 nm. As the thickness decreases, the position of the ( 0 0 3 ) reflection peak in the diffraction pattern shifts to lower values and broadens, indicating an expansion of the cell along the c -axis. The obtained bandgap values, ranging from 1.55 ± 0.04 to 1.62 ± 0.04 eV, closely align with theoretical predictions. The obtained structures become part of the 2D universe of other similar materials, such as TMDs-graphene, and open up exciting possibilities for new properties and applications.
materials science, multidisciplinary,physics, applied,crystallography