Abstract:Two-dimensional hexagonal boron nitride ( h -BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h -BN is a precondition. The synthesis of h -BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h -BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h -BN on different metal substrates. On the frequently utilized Cu substrate, h -BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h -BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h -BN growth processes is predicted, paving the way for guided growth protocol design.

From Self‐Assembly Hierarchical h‐BN Patterns to Centimeter‐Scale Uniform Monolayer h‐BN Film

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Three-leaf Dart-Shaped Single-Crystal BN Formation Promoted by Surface Oxygen

In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains

Growth and Etching of Centimeter-Scale Self-Assembly Graphene–h-BN Super-Ordered Arrays: Implications for Integrated Electronic Devices

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition.

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Synthesis of Multilayered h-BN Film on the Molten Ni-B and the Influence of Underneath W Substrate

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Thickness-Controlled Synthesis of Uniform Hexagonal Boron Nitride Films on Metal Alloys by Chemical Vapor Deposition

Evolution of ordered nanoporous phases during h-BN growth: Controlling the route from gas-phase precursor to 2D material by $\textit{in-situ}$ monitoring

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Direct Growth of Hbn/graphene Heterostructure Via Surface Deposition and Segregation for Independent Thickness Regulation.

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.