Abstract:The development of two-dimensional (2D) materials has opened up possibilities for their application in electronics, optoelectronics and photovoltaics, because they can provide devices with smaller size, higher speed and additional functionalities compared with conventional silicon-based devices<a href="/articles/s41586-019-1226-z#ref-CR1">1</a>. The ability to grow large, high-quality single crystals for 2D components—that is, conductors, semiconductors and insulators—is essential for the industrial application of 2D devices<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="/articles/s41586-019-1226-z#ref-CR4">4</a>. Atom-layered hexagonal boron nitride (hBN), with its excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="#ref-CR10">10</a>,<a href="#ref-CR11">11</a>,<a href="/articles/s41586-019-1226-z#ref-CR12">12</a>. However, the size of 2D hBN single crystals is typically limited to less than one millimetre<a href="#ref-CR13">13</a>,<a href="#ref-CR14">14</a>,<a href="#ref-CR15">15</a>,<a href="#ref-CR16">16</a>,<a href="#ref-CR17">17</a>,<a href="/articles/s41586-019-1226-z#ref-CR18">18</a>, mainly because of difficulties in the growth of such crystals; these include excessive nucleation, which precludes growth from a single nucleus to large single crystals, and the threefold symmetry of the hBN lattice, which leads to antiparallel domains and twin boundaries on most substrates<a href="/articles/s41586-019-1226-z#ref-CR19">19</a>. Here we report the epitaxial growth of a 100-square-centimetre single-crystal hBN monolayer on a low-symmetry Cu (110) vicinal surface, obtained by annealing an industrial copper foil. Structural characterizations and theoretical calculations indicate that epitaxial growth was achieved by the coupling of Cu <211> step edges with hBN zigzag edges, which breaks the equivalence of antiparallel hBN domains, enabling unidirectional domain alignment better than 99 per cent. The growth kinetics, unidirectional alignment and seamless stitching of the hBN domains are unambiguously demonstrated using centimetre- to atomic-scale characterization techniques. Our findings are expected to facilitate the wide application of 2D devices and lead to the epitaxial growth of broad non-centrosymmetric 2D materials, such as various transition-metal dichalcogenides<a href="#ref-CR20">20</a>,<a href="#ref-CR21">21</a>,<a href="#ref-CR22">22</a>,<a href="/articles/s41586-019-1226-z#ref-CR23">23</a>, to produce large single crystals.

Three-leaf Dart-Shaped Single-Crystal BN Formation Promoted by Surface Oxygen

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Growth of Polar Hexagonal Boron Nitride Monolayer on Nonpolar Copper with Unique Orientation.

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Small onion-like BN leads to ultrafine-twinned cubic BN

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Structure Evolution of Hbn Grown on Molten Cu by Regulating Precursor Flux During Chemical Vapor Deposition

Growth and characterization of uniformly distributed triangular single-crystalline hexagonal boron nitride grains on liquid copper surface

Towards the growth of single-crystal boron nitride monolayer on Cu

Growth of Large Single-Crystalline Monolayer Hexagonal Boron Nitride by Oxide-Assisted Chemical Vapor Deposition

Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate

In Situ Formed Nanoparticle-Assisted Growth of Large-Size Single Crystalline H-Bn on Copper.

Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper

Ni Foam Assisted Synthesis of High Quality Hexagonal Boron Nitride with Large Domain Size and Controllable Thickness

High-Quality Hexagonal Boron Nitride from 2D Distillation

Formation of nanocrystalline BN with a simple chemical route

Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study