Abstract:Ultrathin two-dimensional (2D) semiconducting layered materials offer great potential for extending Moore's law of the number of transistors in an integrated circuit<a href="/articles/s41586-020-2009-2#ref-CR1">1</a>. One key challenge with 2D semiconductors is to avoid the formation of charge scattering and trap sites from adjacent dielectrics. An insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface dielectric, efficiently reducing charge scattering<a href="/articles/s41586-020-2009-2#ref-CR2">2</a>,<a href="/articles/s41586-020-2009-2#ref-CR3">3</a>. Recent studies have shown the growth of single-crystal hBN films on molten gold surfaces<a href="/articles/s41586-020-2009-2#ref-CR4">4</a> or bulk copper foils<a href="/articles/s41586-020-2009-2#ref-CR5">5</a>. However, the use of molten gold is not favoured by industry, owing to its high cost, cross-contamination and potential issues of process control and scalability. Copper foils might be suitable for roll-to-roll processes, but are unlikely to be compatible with advanced microelectronic fabrication on wafers. Thus, a reliable way of growing single-crystal hBN films directly on wafers would contribute to the broad adoption of 2D layered materials in industry. Previous attempts to grow hBN monolayers on Cu (111) metals have failed to achieve mono-orientation, resulting in unwanted grain boundaries when the layers merge into films<a href="/articles/s41586-020-2009-2#ref-CR6">6</a>,<a href="/articles/s41586-020-2009-2#ref-CR7">7</a>. Growing single-crystal hBN on such high-symmetry surface planes as Cu (111)<a href="/articles/s41586-020-2009-2#ref-CR5">5</a>,<a href="/articles/s41586-020-2009-2#ref-CR8">8</a> is widely believed to be impossible, even in theory. Nonetheless, here we report the successful epitaxial growth of single-crystal hBN monolayers on a Cu (111) thin film across a two-inch c-plane sapphire wafer. This surprising result is corroborated by our first-principles calculations, suggesting that the epitaxial growth is enhanced by lateral docking of hBN to Cu (111) steps, ensuring the mono-orientation of hBN monolayers. The obtained single-crystal hBN, incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gate configuration, enhanced the electrical performance of transistors. This reliable approach to producing wafer-scale single-crystal hBN paves the way to future 2D electronics.

Synthesis of Multilayered h-BN Film on the Molten Ni-B and the Influence of Underneath W Substrate

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)

Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal–Insulator–Metal Tunneling Devices

Chemical Vapor Deposition Growth of Uniform Multilayer Hexagonal Boron Nitride Driven by Structural Transformation of a Metal Thin Film

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Thickness-controlled Multilayer Hexagonal Boron Nitride Film Prepared by Plasma-Enhanced Chemical Vapor Deposition

Ni Foam Assisted Synthesis of High Quality Hexagonal Boron Nitride with Large Domain Size and Controllable Thickness

Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy