Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal–Insulator–Metal Tunneling Devices

Yanwei He,Hao Tian,Protik Das,Zhenjun Cui,Pedro Pena,Ivan Chiang,Wenhao Shi,Long Xu,Yuan Li,Tianchen Yang,Miguel Isarraraz,Cengiz S. Ozkan,Mihrimah Ozkan,Roger K. Lake,Jianlin Liu

DOI: https://doi.org/10.1021/acsami.0c07201

2020-07-08

Abstract:Two-dimensional (2D) hexagonal boron nitride (h-BN) plays a significant role in nanoscale electrical and optical devices because of its superior properties. However, the difficulties in the controllable growth of high-quality films hinder its applications. One of the crucial factors that influence the quality of the films obtained via epitaxy is the substrate property. Here, we report a study of 2D h-BN growth on carburized Ni substrates using molecular beam epitaxy. It was found that the carburization of Ni substrates with different surface orientations leads to different kinetics of h-BN growth. While the carburization of Ni(100) enhances the h-BN growth, the speed of the h-BN growth on carburized Ni(111) reduces. As-grown continuous single-layer h-BN films are used to fabricate Ni/h-BN/Ni metal–insulator–metal (MIM) devices, which demonstrate a high breakdown electric field of 12.9 MV/cm.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c07201?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c07201</a>.Substrate preparation; DFT calculation of the geometric structure of h-BN/Ni (111); characterization of Ni substrates after h-BN growth; multipeak fitting of XPS results (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c07201/suppl_file/am0c07201_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the technical challenge of growing high - quality monolayer hexagonal boron nitride (h - BN) films on nickel (Ni) substrates with different surface orientations. Specifically, the researchers grew h - BN films on carburized Ni substrates through molecular beam epitaxy (MBE) technology and explored the influence of different substrate properties on the growth of h - BN. The main objectives of the paper include:

1. **Explore the influence of substrate properties on the growth of h - BN**: It was found that different surface orientations of Ni substrates (such as (100) and (111)) and whether they were carburized significantly affected the growth rate and quality of h - BN. For example, the carburized Ni (100) substrate promoted the growth of h - BN, while the carburized Ni (111) substrate slowed down the growth rate.

2. **Optimize the quality of h - BN films**: By adjusting the properties of the substrate, especially through carburization treatment, the researchers successfully prepared continuous monolayer h - BN films, which have high uniformity and continuity.

3. **Application prospects**: High - quality monolayer h - BN films exhibit excellent performance in metal - insulator - metal (MIM) tunneling devices. For example, the experimental results show that these films can withstand a breakdown electric field strength as high as 12.9 MV/cm, which is of great significance for future nano - electronic and optoelectronic devices.

In summary, this paper aims to achieve the controllable growth of high - quality monolayer h - BN films by controlling substrate properties, thereby promoting their application in high - performance electronic devices.