Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Xiuju Song,Junfeng Gao,Teng Gao,Yufeng Nie,Jingyu Sun,Yubin Chen,Chuanhong Jin,Feng Ding,Yanfeng Zhang,Zhongfan Liu

DOI: https://doi.org/10.48550/arXiv.1501.01740

2015-01-08

Materials Science

Abstract:Chemical vapor deposition synthesis of large domain hexagonal boron nitride (h-BN) with uniform thickness on Cu foils is of great challenge, originating from the extremely high nucleation densities and the reverse hydrogen etching competition reaction. We report herein the successful growth of wafer-scale high-quality h-BN monolayer film with the largest single crystalline domain sizes up to 72 micrometer in edge length using a folded Cu enclosure approach. The highly-confined growth space with this facile and unique approach enables the drastic decrease of nucleation centers together with the effective suppression of hydrogen etching reaction. It is revealed, for the first time, that the orientations of as-grown h-BN monolayers are strongly correlated with the crystalline facets of growth substrates, with the Cu (111) being the best substrate for growing high-quality single crystalline h-BN monolayer, consistent with the density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films and deepens the fundamental understanding of h-BN growth process.