Abstract:Edge structure and stability are crucial in determining both the morphology and the growth behaviours of hexagonal boron nitride (h-BN) domains in chemical vapour deposition (CVD) growth under near thermal equilibrium conditions. In this study, various edges of h-BN on three typical transition metal surfaces used for h-BN's CVD growth, Cu(111), Ni(111) and Rh(111), are explored with density functional theory calculations. Different from that in vacuum, our study shows that the formation of non-hexagonal rings, such as pentagon, heptagon or their pairs, is energetically not preferred and both zigzag (ZZ) edges are more stable than the armchair (AC) edge on all the explored catalyst surfaces under typical conditions of h-BN's CVD growth, which explains the broad experimental observation of triangular h-BN domains. More importantly, our results indicate that, instead of the pristine ZZ edge terminated with nitrogen atoms (ZZN), the triangular BN domains observed in experiments are likely to be enclosed with ZZ Klein edges having dangling atoms, ZZB + N or ZZN + B. By applying the theory of Wulff construction, we predicted that the equilibrium shape of a BN domain could be a hexagon enclosed with nitrogen-rich AC edges, triangles enclosed with two different types of ZZ Klein edges or a hexagon enclosed with boron-rich AC edges if the growth is in a N-rich, neutral or B-rich environment, respectively. This study presents how the edges and equilibrium shapes of h-BN domains can be controlled during the CVD synthesis and provides guidelines for further exploring the growth behaviours and improving the quality of CVD-prepared h-BN films.

Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium

Growth of Polar Hexagonal Boron Nitride Monolayer on Nonpolar Copper with Unique Orientation.

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Direct Growth of Hexagonal Boron Nitride on Epitaxial Graphene

Silicon-assisted growth of hexagonal boron nitride to improve oxidation resistance of germanium

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.

Large-Area Orientation-Controlled Growth of Hexagonal Boron Nitride on Liquid Copper

Growth of aligned and twisted hexagonal boron nitride on Ir(110)

Boron nitride on SiC(0001)

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Structural properties of grain boundary in graphene grown on germanium substrates with different orientations

Precisely Aligned Monolayer MoS2 Epitaxially Grown on h-BN basal Plane

Unidirectional domain growth of hexagonal boron nitride thin films

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Towards the growth of single-crystal boron nitride monolayer on Cu

Toward Single-Layer Uniform Hexagonal Boron Nitride-Graphene Patchworks with Zigzag Linking Edges.