Abstract:Abstract The epitaxial growth of wafer-scale single-crystalline two-dimensional materials requires precise control over the crystallographic orientation and morphology of clusters formed during the initial stages of nucleation. However, there is limited knowledge about the critical nucleus and its growth mechanism for h-BN on high-symmetry surfaces of transition metals. In this study, we provide atomic insights into h-BN nucleation on Ir(111) using scanning tunneling microscopy (STM) and noncontact atomic force microscopy (nc-AFM), corraborated by density functional theory (DFT) calculations. The atomic-resolved structural characterization reveals that the smallest h-BN cluster, exhibiting a non-1:1 stoichiometric ratio of boron and nitrogen atoms, maintains a triangular shape with zigzag-type edges. Through AFM force spectroscopy, individual B and N atoms within the cluster, as well as the N-termination edge, are clearly identified. The achievement of elemental sensitivity at the atomic scale is attributed to the chemical reactivity of the metallic tip. The local registry of h-BN nuclei that align with the prevailing crystalline orientation is consistently identified as NtopBhcp. Despite DFT calculations indicating the energetically favorable NtopBfcc configuration for larger h-BN clusters, the alignment of the nuclei with respect to the underlying substrate remains unchanged throughout the growth of the clusters. This orientation pinning behavior, which impeding the rotational alignment of nuclei following the formation of initial clusters during the early stages of nucleation, presents a valuable avenue for exploring the large-scale growth of binary and ternary materials.

Growth of aligned and twisted hexagonal boron nitride on Ir(110)

Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Growth of Polar Hexagonal Boron Nitride Monolayer on Nonpolar Copper with Unique Orientation.

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Direct Growth of Hexagonal Boron Nitride on Epitaxial Graphene

Microanalysis of single-layer hexagonal boron nitride islands on Ir(111)

Atomic Insights into the Unidirectional Alignment and Orientation-Pinning Behavior of h-BN Nucleation on Ir(111)

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

Boron nitride monolayer growth on vicinal Ni(111) surfaces systematically studied with a curved crystal

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Unidirectional alignment and orientation pinning mechanism of h-BN nucleation on Ir(111) via reactive probe atomic force microscopy

Boron nitride on SiC(0001)

Growth and Etching of Monolayer Hexagonal Boron Nitride

Growth and characterization of uniformly distributed triangular single-crystalline hexagonal boron nitride grains on liquid copper surface

Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.

Towards the growth of single-crystal boron nitride monolayer on Cu

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy