Direct Growth of Hexagonal Boron Nitride on Epitaxial Graphene

Patrick Mende,Jun Li,R. M. Feenstra

2015-01-01

Abstract:low-energy electron diffraction patterns consistent with the presence of many randomly oriented grains of h-BN. We find that increasing the growth temperature leads to the development of a preferential orientation, with the h-BN aligning with the underlying SiC substrate. Atomic-force microscopy and low-energy electron microscopy (LEEM) show triangular crystals exceeding 1 m in extent. Additionally, using a first-principles method for examining low-energy electron reflectivity spectra, 2 we are capable of determining the coverage of h-BN on our samples. We show that our method is sufficiently robust to discriminate between various combinations of numbers of h-BN monolayers (MLs) and graphene MLs based on unique features in their spectra. Prospects for improvement of the h-BN crystallinity, as well as the controlled growth of a specific number of MLs are discussed.