Abstract:Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride 1,2,3,4 —including low permittivity and dissipation, strong electrical insulation, good chemical stability, high thermal conductivity and atomic flatness without dangling bonds—but also useful optical nonlinearity and interfacial ferroelectricity originating from the broken in-plane and out-of-plane centrosymmetry 5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23 . However, the preparation of large-sized single-crystal rBN layers remains a challenge 24,25,26 , owing to the requisite unprecedented growth controls to coordinate the lattice orientation of each layer and the sliding vector of every interface. Here we report a facile methodology using bevel-edge epitaxy to prepare centimetre-sized single-crystal rBN layers with exact interlayer ABC stacking on a vicinal nickel surface. We realized successful accurate fabrication over a single-crystal nickel substrate with bunched step edges of the terrace facet (100) at the bevel facet (110), which simultaneously guided the consistent boron–nitrogen bond orientation in each BN layer and the rhombohedral stacking of BN layers via nucleation near each bevel facet. The pure rhombohedral phase of the as-grown BN layers was verified, and consequently showed robust, homogeneous and switchable ferroelectricity with a high Curie temperature. Our work provides an effective route for accurate stacking-controlled growth of single-crystal two-dimensional layers and presents a foundation for applicable multifunctional devices based on stacked two-dimensional materials.

Homoepitaxy of Boron Nitride on Exfoliated Hexagonal Boron Nitride Flakes

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Direct Growth of Hexagonal Boron Nitride on Epitaxial Graphene

Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Electronic Structure of Exfoliated and Epitaxial Hexagonal Boron Nitride

Fundamental mechanisms of hBN growth by MOVPE

Liquid-Phase Exfoliation of Hexagonal Boron Nitride into Boron Nitride Nanosheets in Common Organic Solvents with Hyperbranched Polyethylene as Stabilizer

Graphene growth on h-BN by molecular beam epitaxy

Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy

Atomistic insights into the nucleation and growth of hexagonal boron nitride and graphene heterostructures

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Growth and Etching of Monolayer Hexagonal Boron Nitride

Nucleation and Growth of Single Crystal Graphene on Hexagonal Boron Nitride

Hexagonal boron nitride crystal growth in the Li3BN2-BN system

Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal

Hexagonal boron nitride: a review on selfstanding crystals synthesis towards 2D nanosheets

Comprehensive characterization and analysis of hexagonal boron nitride on sapphire