Abstract:Large hexagonal boron nitride (hBN) single-layer islands of high crystalline quality were grown on Ir(111) via chemical vapor deposition (CVD) and have been studied with low-energy electron microscopy (LEEM). Two types of hBN islands have been observed that structurally differ in their shape and orientation with respect to iridium, where the former greatly depends on the iridium step morphology. Photoemission electron microscopy (PEEM) and IV-LEEM spectroscopy revealed that the two island types also exhibit different work functions and bindings to iridium, which provides an explanation for differences in their shape and growth modes. In addition, various temperatures were used for the CVD synthesis of hBN, and it was found that at temperatures higher than ~950 °C boron atoms, originating either from decomposed borazine molecules or disintegrated hBN islands, can form additional compact reconstructed regions. The presented results are important for advancement in synthesis of high-quality hBN and other boron-based layered materials, and could therefore expedite their technological implementation.

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on the following aspects: 1. **Growth characteristics of single - layer hexagonal boron nitride (hBN) on Ir(111)**: - Researchers successfully grew high - quality single - layer hBN islands on Ir(111) by chemical vapor deposition (CVD) method and characterized their detailed microstructures using low - energy electron microscopy (LEEM). They observed two different types of hBN islands: triangular and trapezoidal, which differed in shape and orientation. 2. **Growth behavior at different temperatures**: - The paper explored the influence of different synthesis temperatures on the growth of hBN islands. The results showed that at lower temperatures, hBN islands formed chain - like structures along the Ir step edges; while at higher temperatures (such as 1100°C), the average size of the islands increased and eventually merged into a complete single - layer hBN. 3. **Stability and decomposition mechanism of hBN islands**: - It was found that when the temperature exceeded about 950°C, hBN islands would start to decompose from the edges, and B atoms would form additional compact reconstruction areas on the Ir surface. This provided important information for understanding the stability of hBN at high temperatures. 4. **Interaction between hBN and Ir**: - By combining IV - LEEM spectroscopy and PEEM techniques, researchers found that triangular and trapezoidal hBN islands had different work functions (WF), indicating that they had different binding strengths to the Ir substrate. Specifically, the triangular islands had stronger binding, while the trapezoidal islands were weaker. 5. **Rotational symmetry and edge types of hBN islands**: - The paper analyzed in detail the rotation angles of hBN islands relative to Ir and their edge types. All the observed island edges were zigzag (ZZ) edges, which was consistent with the theoretical calculation results. In addition, two 180° - rotated hBN variants were also found, which might be due to different arrangements of N and B atoms on the Ir surface. 6. **Potential applications and technological significance**: - The successful synthesis of high - quality single - layer hBN is crucial for promoting the technological applications of hBN - based heterostructures and other two - dimensional materials. For example, in the fields of transistors, integrated circuits, and molecular self - assembly, hBN shows great potential as an insulating support material. In summary, this paper aims to deeply study the growth mechanism, morphological characteristics of single - layer hBN on Ir(111) and its interaction with the substrate, so as to provide theoretical basis and technical support for the large - scale preparation of high - quality hBN.

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