Abstract:Abstract The epitaxial growth of wafer-scale single-crystalline two-dimensional materials requires precise control over the crystallographic orientation and morphology of clusters formed during the initial stages of nucleation. However, there is limited knowledge about the critical nucleus and its growth mechanism for h-BN on high-symmetry surfaces of transition metals. In this study, we provide atomic insights into h-BN nucleation on Ir(111) using scanning tunneling microscopy (STM) and noncontact atomic force microscopy (nc-AFM), corraborated by density functional theory (DFT) calculations. The atomic-resolved structural characterization reveals that the smallest h-BN cluster, exhibiting a non-1:1 stoichiometric ratio of boron and nitrogen atoms, maintains a triangular shape with zigzag-type edges. Through AFM force spectroscopy, individual B and N atoms within the cluster, as well as the N-termination edge, are clearly identified. The achievement of elemental sensitivity at the atomic scale is attributed to the chemical reactivity of the metallic tip. The local registry of h-BN nuclei that align with the prevailing crystalline orientation is consistently identified as NtopBhcp. Despite DFT calculations indicating the energetically favorable NtopBfcc configuration for larger h-BN clusters, the alignment of the nuclei with respect to the underlying substrate remains unchanged throughout the growth of the clusters. This orientation pinning behavior, which impeding the rotational alignment of nuclei following the formation of initial clusters during the early stages of nucleation, presents a valuable avenue for exploring the large-scale growth of binary and ternary materials.

First-principles study on shape of intrinsic hBN island nucleated during CVD initial growth on Cu(111)

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Three-leaf Dart-Shaped Single-Crystal BN Formation Promoted by Surface Oxygen

Microanalysis of single-layer hexagonal boron nitride islands on Ir(111)

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

The stable interfaces between various edges of hBN and step edges of Cu surface in hBN epitaxial growth: a comprehensive theoretical exploration

Atomic Insights into the Unidirectional Alignment and Orientation-Pinning Behavior of h-BN Nucleation on Ir(111)

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Unidirectional alignment and orientation pinning mechanism of h-BN nucleation on Ir(111) via reactive probe atomic force microscopy

Revealing the nucleation mechanism of CVD-prepared hexagonal boron nitride on transition metal surfaces: A study from DFT calculations

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Effects of Surface Topology on the Formation of Oxide Islands on Cu Surfaces

Study on the Growth Mechanism of Monolayer and Few-Layer Hexagonal Boron Nitride Films on Copper Foil

First-principles study on CVD growth mechanism of 2D NbC on Cu(1 1 1) surface

Structure Evolution of Hbn Grown on Molten Cu by Regulating Precursor Flux During Chemical Vapor Deposition

First principles investigation of ammonia borane decomposition for understanding h-BN growth on the copper surface

Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate

Towards the growth of single-crystal boron nitride monolayer on Cu

Figure-of-Merit in 2D Insulators Pertaining to the Thermokinetics of Hexagonal Boron Nitride Via Atmospheric-Pressure Chemical Vapor Deposition (APCVD) on Cu: Origin and Scenario

Boron nitride monolayer growth on vicinal Ni(111) surfaces systematically studied with a curved crystal