Study on the Growth Mechanism of Monolayer and Few-Layer Hexagonal Boron Nitride Films on Copper Foil

Mingyuan Wang,Guiwu Liu,Shuangying Lei,Neng Wan

DOI: https://doi.org/10.1039/d4cp01930j

IF: 3.3

2024-06-14

Physical Chemistry Chemical Physics

Abstract:During the process of synthesizing h-BN on Cu foil via chemical vapor deposition (CVD), low-pressure CVD (LPCVD) typically syntheses monolayer h-BN films, whereas atmospheric pressure CVD (APCVD) yields few-layer h-BN films. Herein, a growth mechanism for monolayer and few-layer h-BN on Cu foil is proposed by first-principles calculations: Cu(111) passivate h-BN hinders the diffusion of B and N atoms at the subsurface of Cu(111), preventing sufficient B and N atoms transport to the existing h-BN layer, thereby leading the formation of monolayer h-BN at LPCVD. For APCVD, the edges of h-BN are passivated by H, which decreases the barrier energy for the diffusion of B and N atoms on Cu(111) subsurface, and B and N atoms can easily migrate from the subsurface of Cu(111) to its surface, resulting in the nucleation of h-BN between the existing h-BN and Cu(111), and leading to the formation of few-layer h-BN films. This work provides theoretical basis at atomic scale for further understanding the growth of monolayer and few-layer h-BN films on Cu foil.

chemistry, physical,physics, atomic, molecular & chemical