Abstract:Hexagonal boron nitride (h-BN) has attracted significant attention due to its exceptional properties. Among various substrates used for h-BN growth, diamond emerges as a more promising substrate due to its high-temperature resistance and superior electrical properties. To reveal the nucleation mechanism of h-BN on the diamond (111) surface and the impact of hydrogenation treatment on this process, we explored the adsorption, diffusion, nucleation morphologies, and predicted nucleation pathways in this process using first-principles calculations based on density functional theory (DFT). Our results indicate that N positioned above the first layer of C and B positioned above the second layer of C enhance the stability of BN clusters. During the growth of BN clusters, there is a geometric transformation from chain-like structures to honeycomb-like structures. The proportion of unhybridized sp2 atoms within BN clusters and geometric symmetry significantly influence h-BN growth. Moreover, computational findings also suggest that to enhance the nucleation rate of h-BN it is essential to inhibit the formation of zigzag chain structures by BN clusters during the early stages of nucleation on a clean diamond surface. Additionally, hydrogenation treatment decreases the binding affinity of B and N on the substrate, facilitating atomic diffusion, and has been identified as an effective approach to facilitate nucleation. Furthermore, hydrogen-terminated diamond acts as an electron donor in the system, which profoundly affects the morphology of growing h-BN and the characteristics of the h-BN/diamond heterostructures. These conclusions are important to understanding and optimizing h-BN growth on diamond and provide a theoretical basis of the construction and application of the h-BN/diamond heterostructure.

Unidirectional alignment and orientation pinning mechanism of h-BN nucleation on Ir(111) via reactive probe atomic force microscopy

Atomic Insights into the Unidirectional Alignment and Orientation-Pinning Behavior of h-BN Nucleation on Ir(111)

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride.

Three-leaf Dart-Shaped Single-Crystal BN Formation Promoted by Surface Oxygen

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Dynamic Observation of In-Plane H-Bn/graphene Heterostructures Growth on Ni(111)

Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.

Revealing the nucleation mechanism of CVD-prepared hexagonal boron nitride on transition metal surfaces: A study from DFT calculations

Directional etching for high aspect ratio nano-trenches on hexagonal boron nitride by catalytic metal particles

Formation of a monolayer h -BN nanomesh on Rh (111) studied using in-situ STM

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

Hydrogen-driven boron nitride phase differentiation during the epitaxial nucleation on the diamond (001) surface

Structure Evolution of Hbn Grown on Molten Cu by Regulating Precursor Flux During Chemical Vapor Deposition

Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride

Boron nitride monolayer growth on vicinal Ni(111) surfaces systematically studied with a curved crystal