Abstract:It is demonstrated that cuprous oxide (Cu2O) can be electrodeposited epitaxially onto silicon (Si) and indium phosphide (InP) (001) single‐crystalline substrates from aqueous solution. Epitaxial electrodeposition under these conditions is remarkable considering the strong driving force for the formation of amorphous native oxide layers on Si and InP substrates. To elucidate the growth mechanisms, the microstructure of the interfaces between the Cu2O layer and the two different substrates was investigated by TEM (transmission electron microscopy) in conjunction with XEDS (X‐ray energy‐dispersive spectroscopy) and EELS (electron energy‐loss spectroscopy). In both heteroepitaxial systems, the Cu2O layers have a unique but non‐trivial crystallographic orientation relationship (OR) with the substrate, which can be described as a 45° rotation around the common [001] axis representing the substrate normal. We show that this relationship minimizes the overall misfit between corresponding interatomic spacings of the two adjacent crystals. In apparent contradiction to the unique OR, TEM revealed that in both hetero‐systems the Cu2O layer is separated from the substrate by an amorphous interlayer. The thickness of the interlayer typically is a few nanometers. The presence of an amorphous interlayer contrasts with our experimental results on electrodeposited Cu2O on Au (001) single‐crystal substrates, also included in this article, where TEM shows the Cu2O epilayer in direct contact with the substrate. XEDS and EELS analysis of the chemical composition and bonding at Cu2O/Si and Cu2O/InP interfaces in the as‐grown state as well as after tempering revealed that the interlayer is mainly composed of SiO2 and InPO4, respectively. Most likely, the observed epitaxial layers on top of an amorphous interlayer evolve by nucleation of epitaxial Cu2O directly on the substrate. While simultaneous oxidation of the substrate leads to the formation of an amorphous layer, the epitaxial nuclei can laterally overgrow the oxide. Consequently, the local composition of the amorphous layer varies with the nature of the substrate.

Effects of Surface Topology on the Formation of Oxide Islands on Cu Surfaces

Unusual layer-by-layer growth of epitaxial oxide islands during Cu oxidation

The Surface Condition Effect of Cu2O Flower/grass-Like Nanoarchitectures Grown on Cu Foil and Cu Film

Atomistic details of oxide surfaces and surface oxidation: the example of copper and its oxides

EPITAXIAL GROWTH OF CUPROUS OXIDE ELECTRODEPOSITED ONTO SEMICONDUCTOR AND METAL SUBSTRATES

In situ Visualization of Cluster-mediated Oxidation Dynamics and Kinetics on Cu(111)

Impact of Surface Hydroxyl Groups on CuO Film Growth by Atomic Layer Deposition

Scanning Tunneling Microscopy Study of Surface Reconstruction Induced by N Adsorption on Cu（100） Surface

Atomic Structure of the Cu2O(111) Surface: A Transmission Electron Microscopy and DFT + U Study

Growth of CuO Nanowires on Si Substrate by Thermal Oxidation Method and Its Interfacial Delamination Mechanism.

Tuning the Structures of Two-Dimensional Cuprous Oxide Confined on Au(111)

Interface-controlled Two-Dimensional Cuprous Oxide Structures

Intermediate Structures of Nucleation and Growth during Solidification of CuO Constrained by Graphene

Growth and Interfacial Interaction of Cu on ZrO2(111) Thin Film

Surface Reconstruction in the CuO(001) Surface: from Square-Planar to Tetrahedral Coordination for CuO4 Unit

Effects of Surface Oxidation of Cu Substrates on the Growth Kinetics of Graphene by Chemical Vapor Deposition.

Origin Of The Thickness-Dependent Oxidation Of Ultrathin Cu Films On Au(111)

Orientation-dependent oxidation behavior of Cu under In-situ E-Beam irradiation

Stabilization of the (1 1 1) Surface of NiO and CoO by Segregation of Point Defects

Preparation of High quality Cu2O crystal and its opto-electronic properties

Elucidation of heterogeneous graphene nucleation and growth through Cu surface engineering