Growth and Interface Structures of Zr/Nb Films and Si(110) Substrate
Wenqing Yao,Liwu Zhang,Mu Haojie,Chuan Zhang,Yan Jin,Yongfa Zhu,Yang Jiangrong,Liu Kezhao,Xian Xiaobin
DOI: https://doi.org/10.3969/j.issn.1672-7126.2011.02.02
2011-01-01
Abstract:The Zr/Nb films were deposited by DC magnetron sputtering on Si(110) substrates.The impacts of the film growth conditions,including the sputtering power,substrate temperature and pressure,etc.,on properties of the Zr/Nb films were studied.Its microstructures and stoichiometries were characterized with X-ray diffraction(XRD),scanning electron microscopy(SEM),and scanning Auger spectroscopy(AES).The results show that the polycrystalline Zr layer grew with(100),(101) and (102) as the preferential orientations,and that the Nb layer has a crystalline structure with preferential growth orientation in(110).The average grain sizes of Zr and Nb were found to be 14 nm and 6 nm,respectively.The fairly flat,smooth,compact,fracture-free Zr/Nb films have well-defined sharp interface.A compact oxides layer was found to cover the surfaces with a small amount of oxygen existing inside the films in the chemical adsorption mode.