Abstract:Hexagonal boron nitride (h-BN) has attracted significant attention due to its exceptional properties. Among various substrates used for h-BN growth, diamond emerges as a more promising substrate due to its high-temperature resistance and superior electrical properties. To reveal the nucleation mechanism of h-BN on the diamond (111) surface and the impact of hydrogenation treatment on this process, we explored the adsorption, diffusion, nucleation morphologies, and predicted nucleation pathways in this process using first-principles calculations based on density functional theory (DFT). Our results indicate that N positioned above the first layer of C and B positioned above the second layer of C enhance the stability of BN clusters. During the growth of BN clusters, there is a geometric transformation from chain-like structures to honeycomb-like structures. The proportion of unhybridized sp2 atoms within BN clusters and geometric symmetry significantly influence h-BN growth. Moreover, computational findings also suggest that to enhance the nucleation rate of h-BN it is essential to inhibit the formation of zigzag chain structures by BN clusters during the early stages of nucleation on a clean diamond surface. Additionally, hydrogenation treatment decreases the binding affinity of B and N on the substrate, facilitating atomic diffusion, and has been identified as an effective approach to facilitate nucleation. Furthermore, hydrogen-terminated diamond acts as an electron donor in the system, which profoundly affects the morphology of growing h-BN and the characteristics of the h-BN/diamond heterostructures. These conclusions are important to understanding and optimizing h-BN growth on diamond and provide a theoretical basis of the construction and application of the h-BN/diamond heterostructure.

First principles investigation of ammonia borane decomposition for understanding h-BN growth on the copper surface

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Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Construction of a Nanoporous Highly Crystalline Hexagonal Boron Nitride from an Amorphous Precursor for Catalytic Dehydrogenation.

Ab Initio Kinetic Pathway of Diborane Decomposition on Transition Metal Surfaces in Borophene Chemical Vapor Deposition Growth

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First-Principles Calculations of the Hydrolysis Mechanism of Hexagonal Boron Nitride Nanosheets: Implications for Preventing Hydrolytic Degradation

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A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Understanding vapor phase growth of hexagonal boron nitride

Synthesis Landscapes for Ammonia Borane Chemical Vapor Deposition of h -BN and BNNT: Unraveling Reactions and Intermediates from First-Principles

Effect of Flow Rate and Precursor Sublimation Temperature on the LPCVD Growth of Hexagonal Boron Nitride

Exploring Gas-Phase Chemical Reactions in NH 3 /B 2 H 6 Systems for Chemical Vapor Deposition Using Reactive Molecular Dynamics

Dehydrogenation of Ammonia Borane Catalyzed by Pristine and Defective H-Bn Sheets

Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study

Study on the Growth Mechanism of Monolayer and Few-Layer Hexagonal Boron Nitride Films on Copper Foil

Depositing boron on Cu(111): Borophene or boride?

Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition