Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

First-principles study on CVD growth mechanism of 2D NbC on Cu(1 1 1) surface

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Revealing the nucleation mechanism of CVD-prepared hexagonal boron nitride on transition metal surfaces: A study from DFT calculations

Tight-binding Calculation of Growth Mechanism of Graphene on Ni(111) Surface

Understanding the atomic and electronic structure of the NbC(111)/Cu(111) interface via first principles calculation

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Recent Advances in Growth of Large‐Sized 2D Single Crystals on Cu Substrates

Concentric Advancing Front Corrugations and Multiple Ordered Growth of 2D Mo2C Crystals

First-Principles Thermodynamics of Graphene Growth on Cu Surfaces

Discovery of Carbon-Vacancy Ordering in Nb4AlC3–x under the Guidance of First-Principles Calculations

Elimination of Grain Boundaries in Graphene Growth on a Cu–Ni Alloyed Substrate by Chemical Vapor Deposition

Two-dimensional stable transition metal carbides (MnC and NbC) with prediction and novel functionalizations.

First-Principles Study of Nbc/Nb Interface Stability and Electronic Structure

Epitaxial Growth of 2D Materials on High‐Index Substrate Surfaces

First-principles Study of C Chemisorption and Diffusion on the Surface and in the Subsurfaces of Ni(1 1 1) During the Growth of Carbon Nanofibers

Towards the growth of single-crystal boron nitride monolayer on Cu

Growth Intermediates For Cvd Graphene On Cu(111): Carbon Clusters And Defective Graphene

Superconductivity and Fermi-surface nesting in the candidate Dirac semimetal NbC

Engineering two-dimensional materials from single-layer NbS$_2$

New insights into the formation mechanism of the multicomponent carbides (Nb, M)C (M = Ti, Cr and Mn)