Abstract:Two-dimensional (2D) materials, characterized by their atomic thickness and exceptional electrical, optical, magnetic, and thermal properties, hold great promise for applications in electronics, optoelectronics, and energy. As silicon-based transistors approach their theoretical physical limits, the continuation of Moore's law faces significant challenges. It is expected that 2D materials will surpass silicon-based materials to enable the development of a new generation of electronic devices. The key to achieving their high performance and large-scale applications lies in the controllable preparation of large-sized single-crystal 2D films. Over the past decade, substantial progress has been made in growing single crystal 2D materials such as graphene (a typical 2D conductor), semiconductor transition metal chalcogenides (TMD), and insulators like hexagonal boron nitride (hBN). These materials have expanded from micron-level sizes to wafer scales. However, for optimal performance, it is generally necessary to layer 2D material films on insulating substrates. Therefore, the ultimate goal is direct growth of single-crystal 2D materials on insulating substrates. Due to the inherent properties of insulating substrates, such as their catalytic inertness towards precursor decomposition and the high energy barrier for reactive substances like carbon and boron nitride, growing 2D materials, especially graphene and hBN, on insulating substrates presents unique challenges. In contrast to metal substrates, the coupling interaction between 2D materials and insulating substrates is notably weak. As a result, obtained graphene and hBN films often exhibit significant defects and limited crystal quality, which negatively impact the physical integrity and electrical performance of devices based on these 2D materials. Consequently, achieving orientation control of 2D domains on insulating substrates proves exceptionally challenging. In this review, we first discussed the growth behavior of 2D materials on different substrates, including both catalytic and non-catalytic substrates. Subsequently, we reviewed the progress on the direct growth of 2D materials on insulating substrates, and we focused on the advancements made in producing representative 2D single crystals, including TMD, graphene and hBN. In detail, we reviewed the progress in the preparation of TMD single crystals on insulating substrates, including the synthesis discussion of atomic step control and seed crystal-assisted growth. We also discussed the advancements in the preparation of graphene single crystals on insulating substrates, such as the high-temperature growth of graphene using electromagnetic induction heating and the growth of graphene through multi-cycle plasma etchingassisted-chemical vapor deposition. Besides, we primarily discussed the scalability of atomic stamping techniques in the preparation of large-area hBN single crystals. These techniques have proven to be effective in producing high-quality 2D single crystals on specific insulating substrates. Finally, we discussed existing challenges and future perspectives regarding the direct growth of high-quality 2D materials on insulating substrates and looked forward to future research on the direct growth on semiconductor devices at low-temperatures, the growth of layer-, stacking-, and twist-controlled 2D single crystals and their heterostructures. In conclusion, the direct growth of 2D single crystals on insulating substrates is a rapidly evolving field with significant potential for future technological advancements. We hope this review can propel in-depth comprehension of the direct growth of 2D single crystals on insulators.

Epitaxial Growth of 2D Materials on High‐Index Substrate Surfaces

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

The stable interfaces between various edges of hBN and step edges of Cu surface in hBN epitaxial growth: a comprehensive theoretical exploration

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates

Epitaxy of 2D Materials toward Single Crystals

Recent Advances in Growth of Large‐Sized 2D Single Crystals on Cu Substrates

Towards the growth of single-crystal boron nitride monolayer on Cu

Growth of Single Crystalline 2D Materials beyond Graphene on Non‐metallic Substrates

The epitaxy of 2D materials growth

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Construction of 2D Atomic Crystals on Transition Metal Surfaces: Graphene, Silicene, and Hafnene.

Progress on the Growth of Two-Dimensional Single Crystals on Insulating Substrates

Epitaxial Growth of High-Quality Monolayer MoS 2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices

Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices.