Abstract:Two-dimensional molybdenum disulfide (MoS2) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS2 wafers still remains a challenge. Here, we report an epitaxy route toward 4 in. monolayer MoS2 wafers with highly oriented and large domains on sapphire. Benefiting from a multisource design for our chemical vapor deposition setup and the optimization of the growth process, we successfully realized material uniformity across the entire 4 in. wafer and greater than 100 μm domain size on average. These monolayers exhibit the best electronic quality ever reported, as evidenced from our spectroscopic and transport characterizations. Our work moves a step closer to practical applications of monolayer MoS2.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c02531?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c02531</a>.Photo of the 4 in. multisource CVD system, more growth results under different oxygen flux and temperature, AFM and STEM images of additional layer growth on grain boundaries, AFM images of different locations of a wafer, XPS and Raman characterizations to confirm the oxygen concentration and strain in MoS2 films, more electrical measurements for MoS2 films, detailed structure of logic circuits and the MoS2 growth results on SiO2/Si substrates (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c02531/suppl_file/nl0c02531_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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