Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface

A. Elbaroudy,B. Khromets,F. Sfigakis,E. Bergeron,Y. Shi,M.C.A. Tam,T. Blaikie,George Nichols,J. Baugh,Z. R. Wasilewski

DOI: https://doi.org/10.1116/6.0003459

2024-04-20

Abstract:Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a thin, continuous Al layer using the Molecular Beam Epitaxy (MBE) is challenging due to aluminum's high surface mobility and tendency for 3D nucleation on semiconductor surfaces. A study of epitaxial Al thin film growth on In0.75Ga0.25As with MBE is presented, focusing on the effects of the Al growth rate and substrate temperature on the nucleation of Al layers. We find that for low deposition rates, 0.1 Å/s and 0.5 Å/s, the growth continues in 3D mode during the deposition of the nominal 100 Å of Al, resulting in isolated Al islands. However, for growth rates of 1.5 Å/s and above, the 3D growth mode quickly transitions into island coalescence, leading to a uniform 2D Al layer. Moreover, this transition is very abrupt, happening over an Al flux increase of less than 1%. We discuss the growth mechanisms explaining these observations. The results give new insights into the kinetics of Al deposition and show that with sufficiently high Al flux, a 2D growth on substrates at close to room temperature can be achieved already within the first few Al monolayers. This eliminates the need for complex cryogenic substrate cooling and paves the way for the development of high-quality superconductor-semiconductor interfaces in standard MBE systems.

Materials Science,Applied Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to achieve high - quality growth of a thin aluminum (Al) layer on the InGaAs surface during the molecular beam epitaxy (MBE) growth process. Specifically, the research focuses on the influence of the aluminum growth rate and the substrate temperature on the nucleation path of the aluminum layer and the final layer morphology. Through this research, the authors hope to reveal the mechanism of aluminum thin - film growth and show that, under conditions close to room temperature, two - dimensional growth can be achieved within the first few aluminum monolayers by a sufficiently high aluminum flux. This not only eliminates the need for complex low - temperature substrate cooling but also paves the way for the development of high - quality superconductor - semiconductor interfaces in standard MBE systems.

The main findings in the paper include:
- For lower deposition rates (such as 0.1 Å/s and 0.5 Å/s), the growth mode of aluminum remains three - dimensional (3D) throughout the 100 - Å aluminum deposition process, forming isolated aluminum islands.
- When the growth rate is increased to 1.5 Å/s and above, the 3D growth mode rapidly transforms into island coalescence, resulting in the formation of a uniform two - dimensional (2D) aluminum layer. This transformation is very sudden and occurs when the aluminum flux is increased by less than 1%.
- These results provide new insights into the aluminum deposition dynamics and indicate that 2D growth can be achieved even on substrates close to room temperature by a sufficiently high aluminum flux.

These findings are of great significance for the development of superconductor - semiconductor hybrid structures used in topological quantum computing, especially for the research on the realization of Majorana Zero Modes (MZMs).