Abstract:First-principles calculations based on density-functional theory and the generalized gradient approximations have been carried out to investigate interface properties of β-Si3N4/Si(111) systemically. An interface structure without dangling bonds at the interface was proposed, and this interface structure was found energetically more favorable than the existing model. Perfect bonding structure and strong Si–N bonds at the interface due to the charge transfer from Si atoms to N atoms result in this stable interface structure. The calculated band offsets of this interface structure are in agreement with previous theoretical estimations and experimental results. Besides, we also studied the effects of dangling bonds at the interface on electronic properties of β-Si3N4/Si(111). Dangling bonds would slightly decrease the valence band offset and generate gap states at the interface. The hydrogen saturated interface shows better electronic properties but the low dissociation energy of Si–H bonds would be a problem in applications.

High Temperature Nitridation Structures of the Si(111)-(7×7) Surface

Studies of the High Temperature Nitridation Structures of the Si(111) Surface by LEED, AES and EELFS

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

Formation of the Schottky barrier at (3 × 1)NaSi(111) surface

Atomic Structure Of The Si(112) 7x1-In Surface

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Structure and Stability of Si(114)-(2x1)

Nitridation Of Si(100)-(2 X 1) Surface By Nh3: A Quantum Chemical Cluster Model Study

Surface structure of 3C‐SiC(111) grown on Si(111) surface by C 60 precursor

First-Principles Study On Geometric And Electronic Structures Of Si(111)-Root 7 X Root 3-In Surface Reconstruction

Atomic Structure Of The Si(103)1x1-In Surface

Electronic-Structure And Its Dependence On Local Order For H/Si(111)-(1x1) Surfaces

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing

Identifying the Numbers of Ag Atoms in Their Nanostructures Grown on a Si(111)-(7 × 7) Surface

Surface structure of the 3x3-Si phase on Al(111), studied by the multiple usages of positron diffraction and core-level photoemission spectroscopy

Electronic Structures of Β-Si3n4(0001)/si(111) Interfaces: Perfect Bonding and Dangling Bond Effects