Abstract:There are many two-dimensional superconductors, but only now have monolayers of metallic atoms shown superconductivity. Grown on silicon substrates, epitaxial films of lead and indium represent the thinnest superconductors possible. The two-dimensional (2D) superconducting state is a fragile state of matter susceptible to quantum phase fluctuations. Although superconductivity has been observed in ultrathin metal films down to a few layers1,2,3,4,5,6,7,8,9,10, it is still not known whether a single layer of ordered metal atoms, which represents the ultimate 2D limit of a crystalline film, could be superconducting. Here we report scanning tunnelling microscopy measurements on single atomic layers of Pb and In grown epitaxially on Si(111) substrate, and demonstrate unambiguously that superconductivity does exist at such a 2D extreme. The film shows a superconducting transition temperature of 1.83 K for an atom areal density n=10.44 Pb atoms nm−2, 1.52 K for n=9.40 Pb atoms nm−2 and 3.18 K for n=9.40 In atoms nm−2, respectively. We confirm the occurrence of superconductivity by the presence of superconducting vortices under magnetic field. In situ angle-resolved photoemission spectroscopy measurements reveal that the observed superconductivity is due to the interplay between the Pb–Pb (In–In) metallic and the Pb–Si (In–Si) covalent bondings.

Metallic Indium Monolayers on Si(111)

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Superconductivity in One-Atomic-layer Metal Films Grown on Si(111)

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Electron Energy Loss Spectroscopy, Low Energy Electron Diffraction, and Auger Electron Spectroscopy Study of Indium Overlayers on Si(111) and Si(100) Surfaces

Two-Dimensional Metallicity and Ferromagnetic Ordering in Monoatomic-Thick Ce Layer on Si(111)

Electronic Structure Of Identical Metal Cluster Arrays On Si(111)-7x7 Surfaces

Mechanism of the Band Gap Opening Across the Order-Disorder Transition of Si(111)(4x1)-In

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Atomic Structure Of The Si(112) 7x1-In Surface

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Triangular Mott-Hubbard Insulator Phases of Sn/Si(111) and Sn/Ge(111) Surfaces

Scanning Tunneling Microscopy Observation of Surface Superstructures During the Growth of in on In/Si(111) Surface

Atomic and Electronic Structures of Submonolayer in on Cu(111)

An ab initio approach to anisotropic alloying into the Si(001) surface

Comparative study of the electronic structures of the In and Sn/In2O3 (111) interfaces

STM studies of initial In growth on Si(100)2 × 1: the In ad-dimer chain and its I-V characteristics

Ohmic contact in monolayer InSe-metal interface

La induced Si 3 trimer monolayer on Si(111) surface: an ab initio study

Growing Extremely Thin Bulklike Metal Film on a Semiconductor Surface: Monolayer Al(111) on Si(111)