Abstract:We present scanning tunneling microscopy observations of the reaction of cobalt with Si(111)-(7×7). For deposition at 320 °C (reactive epitaxy), flat-topped monolayer islands of triangular shape with vertices along 〈1̄1̄2〉Si nucleate on the faulted side of the 7×7 structure then grow in size attaining edge lengths that are quantized to integer multiples of the 7×7 unit cell. A 2×2 reconstruction with large corrugation occurs on some of the islands, and is believed to be an ordered array of silicon adatoms. The shape and orientation of the islands appears to be determined by energetics, not growth kinetics. They coexist with the 7×7 structure, implying that metal atoms readily diffuse through the silicon matrix before attaching to an existing island. From the areal density of islands we estimate an activation energy for ‘‘surface diffusion’’ of 0.8 eV, and argue that the process involves metal atom transport through near-surface silicon interstitials. At lower temperatures, no ordered silicide forms, while at higher temperatures, multilayer islands form with a predominant layer spacing of 3.1 Å suggesting that they are (111)CoSi2. For postdeposition annealing at 600 °C (solid phase epitaxy), large, multilayer islands of CoSi2 form, in coexistence with a √7 submonolayer phase. General aspects of the nucleation, growth, and coarsening in this reactive, epitaxial system are discussed.

Scanning Tunneling Microscopy Observation of Surface Superstructures During the Growth of in on In/Si(111) Surface

Scanning Tunneling Microscopy Studies of Nucleation and Growth in a Reactive, Epitaxial System: Co/Si(111)

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Spontaneous Formation of Ordered Indium Nanowire Array on Si(001)

Atomic Structure Of The Si(112) 7x1-In Surface

SCANNING TUNNELING MICROSCOPY INVESTIGATION OF THE Si(103)- (1 × 1)–in SURFACE

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Study of Si and Ge growth on Si(100) surface

Growth of Nano-Structures on Composition-Modulated Inalas Surfaces

Delocalized Surface State in Epitaxial Si(111) Film with Spontaneous √3 × √3 Superstructure

Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)

Stm Observation and First-Principles Determination of Ge Nanoscale Structures on Si(111)

Templated Growth of Quasi-One Dimensional Molecular Structures on Si(111)-(4×1)–In Surface

Scanning Tunneling Microscopy Studies Of The Formation And Coarsening Of Manganese Silicides On Si(111)

STM studies of initial In growth on Si(100)2 × 1: the In ad-dimer chain and its I-V characteristics

Epitaxial growth of Si thin films with hexagonal close-packed structures on metal substrates

Surface And Interface Study Of U/Si (111)

Strain-Driven Formation of Nanostripes on In/Si(113) Surface

Growth of Single-Domain Monatomic in Chain Arrays on the Vicinal Si(001) Surface