Abstract:We present scanning tunneling microscopy observations of the reaction of cobalt with Si(111)-(7×7). For deposition at 320 °C (reactive epitaxy), flat-topped monolayer islands of triangular shape with vertices along 〈1̄1̄2〉Si nucleate on the faulted side of the 7×7 structure then grow in size attaining edge lengths that are quantized to integer multiples of the 7×7 unit cell. A 2×2 reconstruction with large corrugation occurs on some of the islands, and is believed to be an ordered array of silicon adatoms. The shape and orientation of the islands appears to be determined by energetics, not growth kinetics. They coexist with the 7×7 structure, implying that metal atoms readily diffuse through the silicon matrix before attaching to an existing island. From the areal density of islands we estimate an activation energy for ‘‘surface diffusion’’ of 0.8 eV, and argue that the process involves metal atom transport through near-surface silicon interstitials. At lower temperatures, no ordered silicide forms, while at higher temperatures, multilayer islands form with a predominant layer spacing of 3.1 Å suggesting that they are (111)CoSi2. For postdeposition annealing at 600 °C (solid phase epitaxy), large, multilayer islands of CoSi2 form, in coexistence with a √7 submonolayer phase. General aspects of the nucleation, growth, and coarsening in this reactive, epitaxial system are discussed.

Stm Observation and First-Principles Determination of Ge Nanoscale Structures on Si(111)

Toward a Detailed Understanding of Si(111)-7×7Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations

Formation and Evolution of A Self-Organized Hierarchy of Ge Nanostructures on Si(111)-(7x7): Stm Observations and First-Principles Calculations

Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)

Scanning Tunneling Microscopy Of The Si(111)-7x7 Surface And Adsorbed Ge Nanostructures

Initial Stages of the Adsorption of Ge Atoms on Thesi(111)−(7×7)surface

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Scanning Tunneling Microscopy Observation of Surface Superstructures During the Growth of in on In/Si(111) Surface

Nucleation and Growth of Ge Nanoclusters on the Si(111)-(7 × 7) Surface Studied by Scanning Tunneling Microscopy

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Stm Study of the Ga Thin Films Grown on Si(111) Surface

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Self-assembled Growth of Ordered Ge Nanoclusters on the Si(1 1 1)-(7×7) Surface

Formation of the Schottky barrier at (3 × 1)NaSi(111) surface

Study of Si and Ge growth on Si(100) surface

Atomic structure of the Ge(112)-(4 x 1) - In reconstruction

Scanning Tunneling Microscopy Studies of Nucleation and Growth in a Reactive, Epitaxial System: Co/Si(111)

Formation of Ge Nanoclusters on Si(111)-7×7 Surface at High Temperature

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Bonding Configurations and Collective Patterns of Ge Atoms Adsorbed on Si(111)-(7 X 7).

Surface Reconstruction of Germanium: Hydrogen Intercalation and Graphene Protection