Abstract:Artificially ordered Ge quantum dot (QD) arrays, where confined carriers can interact via exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ fine-probe electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in UHV, forming ordered arrays of nanoscale SiC precipitates that serve as templates for subsequent Ge quantum dot self-assembly during heteroepitaxy. This templating approach has so far produced interdot spacings down to 22.5 nm, and smaller spacings should be possible. We investigate the templated feature evolution during UHV processing to identify key mechanisms that must be controlled in order to preserve pattern fidelity and reduce broadening of the quantum dot size distribution. A key finding is that the presence of a small background of excess carbon reduces Ge surface diffusion, thereby suppressing coarsening to relatively high temperatures. In fact, coarsening of the carbonaceous nanodot template prior to conversion to SiC can be a more important contributor to size dispersion, and must be avoided through control of thermal budget.

Self-assembled Growth of Ordered Ge Nanoclusters on the Si(1 1 1)-(7×7) Surface

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Self-Organized Growth of Sub-Monolayer Ge on Si(111)-(7 X 7)

Nucleation and Growth of Ge Nanoclusters on the Si(111)-(7 × 7) Surface Studied by Scanning Tunneling Microscopy

Self-Assembled Nisi Quantum-Dot Arrays On Epitaxial Si0.7ge0.3 On (001)Si

Growth of Ge quantum dots on SiO2/Si(111) surface

Study of Si and Ge growth on Si(100) surface

Formation of Ge Nanoclusters on Si(111)-7×7 Surface at High Temperature

Formation and Evolution of A Self-Organized Hierarchy of Ge Nanostructures on Si(111)-(7x7): Stm Observations and First-Principles Calculations

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Toward a Detailed Understanding of Si(111)-7×7Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations

Nucleation of Ge quantum dots on the Si(001) surface

Controlled Formation of GeSi Nanostructures on Periodic Si (001) Sub-Micro Pillars.

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Ordering of low-density Ge quantum dot on patterned Si substrate

Small ordered Ge quantum dots growth on Si (100) hollow nanopillars

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates