Abstract:We present a joint experimental and theoretical determination of structures of Ag adatoms on the Ge(111) surface using low energy electron diffraction, low energy electron microscopy, scanning tunneling microscopy, and density functional theory-based calculations, as functions of coverages and temperature. Experimentally for clean Ge(111), c(2X8) and (2X1) phases occur, while Ag overlayers cause (4X4), (V3XV3)R30 and (3X1) surface structural phases. The dependence of the growth behavior of these different phases was examined as a function of temperature, Ag deposition rate and coverage, substrate step density, and history of temperature cycling. First-principles calculations of the electronic and geometric structures and vibrational dynamics show the Ge(111)-c(2X8) configuration with Ge adatoms adsorbed on three-fold hollow (T4) sites to be the energetically most favored phase of the Ge(111) surface, among unreconstructed Ge(111), reconstructed Ge(111)-2X1, and Ge(111)-c(2X8) structures. The Ge(111)-Ag(3X1) overlayer of the system has Ge atoms forming a honeycomb chain on a missing top layer reconstructed surface, with metal at 1/3 ML coverage in channel. The Ge (111)-Ag(V3XV3)R30 overlayer contains one monolayer Ag forming inequivalent Ag triangles in a surface unit cell on the missing top layer reconstructed Ge(111) surface. The Ge(111)-Ag(4X4) overlayer formed at low Ag coverage contains two triangular subunits at different heights: one with six Ag adatoms and the other with three Ge adatoms on the intact double layer Ge(111) surface. The temperature and coverage dependent surface phase diagram, obtained by minimizing the surface free energy, captures the main features of the experimental phase diagram.

Bonding Configurations and Collective Patterns of Ge Atoms Adsorbed on Si(111)-(7 X 7).

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Adsorption, Diffusion, And Site Exchange For Ge Ad-Dimers On Sb-Covered Si(001) From First-Principles Total-Energy Calculations

Single Adatom Site Exchange During the Ge Growth on Group V Element Covered Si(001)

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

Study of Si and Ge growth on Si(100) surface

Sub-monolayer structures of Ag overlayers on Ge(111): experimental observations and first-principles study

Atomic Structure of the Ge(101) Surface

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Pits and Adatoms at the Interface of 1-Ml C-84/Ag (111)

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

Atomic structure of the Ge(112)-(4 x 1) - In reconstruction

Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)

Structure transition of Ge/Si(1 1 3) surfaces during Ge epitaxial growth

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Chemisorption of Group-Iii Metals on the (111) Surface of Group-Iv Semiconductors: In/Ge(111)

Atomic Structure of the Ge(313) Surface

Local Structures of Si/Ge-N/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

The Study of Ag Adsorbed on Ge(111) 2×1 Surfaces Using First-Principles Calculations