Abstract:In this work, we address issues pertinent to the understanding of the structural and electronic properties of Si_{1-x} Ge_{x}alloys, namely, (i) how does the lattice constant mismatch between bulk Si and bulk Ge manifests itself in the alloy system? and (ii) what are the relevant strain release mechanisms? To provide answers to these questions, we have carried out an in-depth study of the changes in the local geometric and electronic structures arising from the strain relaxation in Si_{1-x} Ge_{x} alloys using an ab initio molecular dynamics scheme. The optimized lattice constant, while exhibiting a general trend of linear dependence on the composition (Vegard's law), shows a negative deviation from Vegard's law in the vicinity of x=0.5. We delineate the mechanisms responsible for each one of the above features. We show that the radial-strain relaxation through bond stretching is responsible for the overall trend of linear dependence of the lattice constant on the composition. On the other hand, the negative deviation from Vegard's law is shown to arise from the angular-strain relaxation.

Strain effect analysis on the electrical conductivity of Si/Si 1-xGex nanocomposite thin films

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Effects Of Shell Strain On Valence Band Structure And Transport Properties Of Ge/Si1-Xgex Core-Shell Nanowire

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography

Strain effect on thermal conductivity of 3C-SiC nanowire

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Investigation of Strain and Thin Film Relaxation in GexSi1−x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

Strain Induced Quantum Effect in Semiconductors

Influence of strain on the conduction band structure of strained silicon nanomembranes

Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Study of strain distribution in GeSi/Si strained heterostructure

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

CALCULATION OF CRITICAL LAYER THICKNESS BY TAKING INTO ACCOUNT THE THERMAL STRAIN IN Si 1- X Ge X /si STRAIN LAYER HETEROSTRUCTURES

Near-Infrared Femtosecond Laser For Studying The Strain In Si1-Xgex Alloy Films Via Second-Harmonic Generation

Strain engineering in Ge/GeSn core/shell nanowires