Abstract:We used density-functional theory based first principles simulations to study the effects of uniaxial strain and quantum confinement on the electronic properties of germanium nanowires along the [110] direction, such as the energy gap and the effective masses of the electron and hole. The diameters of the nanowires being studied are up to 50 {\AA}. As shown in our calculations, the Ge [110] nanowires possess a direct band gap, in contrast to the nature of an indirect band gap in bulk. We discovered that the band gap and the effective masses of charge carries can be modulated by applying uniaxial strain to the nanowires. These strain modulations are size-dependent. For a smaller wire (~ 12 {\AA}), the band gap is almost a linear function of strain; compressive strain increases the gap while tensile strain reduces the gap. For a larger wire (20 {\AA} - 50 {\AA}), the variation of the band gap with respect to strain shows nearly parabolic behavior: compressive strain beyond -1% also reduces the gap. In addition, our studies showed that strain affects effective masses of the electron and hole very differently. The effective mass of the hole increases with a tensile strain while the effective mass of the electron increases with a compressive strain. Our results suggested both strain and size can be used to tune the band structures of nanowires, which may help in design of future nano-electronic devices. We also discussed our results by applying the tight-binding model.

Valence band variation in Si (110) nanowire induced by a covered insulator

Impact of Thickness and Deposition Temperature of Gate Dielectric on Valence Bands in Silicon Nanowires

Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Strain Impacts on Electron Mobility in Silicon Nanowires

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Effects Of Shell Strain On Valence Band Structure And Transport Properties Of Ge/Si1-Xgex Core-Shell Nanowire

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire

Bandstructures of unstrained and strained silicon nanowire

Ab-initio Study of Size and Strain Effects on the Electronic Properties of Si Nanowires

Uniaxial strain effects on electron ballistic transport in gate-all-around silicon nanowire mosfets

Strain Release Enabled Bandgap Scaling in Ge Nanowire and Tunnel FET Application

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Influence of strain on the conduction band structure of strained silicon nanomembranes

The Effects of Strain and Surface Roughness Scattering on the Quasi-Ballistic Characteristics of A Ge Nanowire P-Channel Field-Effect Transistor

Strain Modulated Electronic Properties of Silicon Nanoribbons with Armchair Edges

Fermi Level Effect on Strain of Si Doped Gan

Influence of radial stress on the performance of gate-all-around Ge(110) NW FETs with HfO 2 dielectric

Strain Modulated Electronic Properties of Ge Nanowires - A First Principles Study