Abstract:Over the past several years, the formation of nanowire heterostructures via a solid-state reaction between a semiconductor nanowire and metal contact pads has attracted great interest. This is owing to its ready application in nanowire field-effect transistors (FETs) with a well-controlled channel length using a facile rapid thermal annealing process. We report the effect of oxide confinement on the formation of Ge nanowire heterostructures via a controlled reaction between a vapor-liquid-solid-grown, single-crystalline Ge nanowire and Ni pads. In contrast to the previous formation of Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni(2)Ge and Ge with the confinement of Al(2)O(3) during annealing. Significantly, back-gate FETs based on this Ni(2)Ge/NiGe/Ge/NiGe/Ni(2)Ge heterostructure demonstrated a high-performance p-type transistor behavior, showing a large on/off ratio of more than 10(5) and a high normalized transconductance of 2.4 μS/μm. The field-effect hole mobility was extracted to be 210 cm(2)/(V s). Temperature-dependent I-V measurements further confirmed that NiGe has an ideal ohmic contact to p-type Ge with a small Schottky barrier height of 0.11 eV. Moreover, the hysteresis during gate bias sweeping was significantly reduced after Al(2)O(3) passivation, and our Ω-gate Ge nanowire FETs using Al(2)O(3) as the top-gate dielectric showed an enhanced subthreshold swing and transconductance. Therefore, we conclude that the Al(2)O(3) layer can effectively passivate the Ge surface and also serve as a good gate dielectric in Ge top-gate FETs. Our innovative approach provides another freedom to control the growth of nanowire heterostructure and to further achieve high-performance nanowire transistors.

Self-Induced Ge-Doped HfO 2 Applied to Ge Stacked Nanowires Ferroelectric Gate-all-Around Field-Effect Transistor with Steep Subthreshold Slope Under O 3 Treatment with GeO 2 as Interfacial Layer

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

High-Mobility Ge P- and N-Mosfets with 0.7-Nm EOT Using $\hbox{hfo}_{2}/\hbox{al}_{2}\hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Hfo2/Al2o3/Ge Gate Stacks with Small Capacitance Equivalent Thickness and Low Interface State Density

TiO2/HfO2 Bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeO xNy passivation layer

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Investigation of Ge Nanocrytals in a Metal-Insulator-semiconductor Structure with a HfO2∕SiO2 Stack As the Tunnel Dielectric

Ferroelectric Negative Capacitance GeSn PFETs with Sub-20 Mv/decade Subthreshold Swing

Characterization of Hfo2/Al2o3 Gate Dielectric Nanometer-Stacks Grown by Atomic Layer Deposition on Ge Substrates

Hfo2/Geoxny/Ge Gate Stacks with Sub-Nanometer Capacitance Equivalent Thickness and Low Interface Trap Density by in Situ Nh3 Plasma Pretreatment

Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe

Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

Tunable EOT Scaling Down to 0. 55 nm for HfO2-Based Gate-Stacks on Ge Substrate by In Situ H2 Plasma Treatment

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with in Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition