Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Necessity of Profile-Fitting when Using X-Ray Diffraction to Analyze GaN Thin Films

Thickness Measurement of GaN Films by X-ray Diffraction

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

A Practical Guide for X-Ray Diffraction Characterization of Ga(Al, In)N Alloys

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

Analysis of the Curvature of GaN Thick Films Grown by HVPE

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Effect of Annealing on Thermal Expansion Behavior of Free-Standing GaN

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Effects of Structural Variations to X-ray Absorption Spectra of g-C$_3$N$_4$: Insights from DFT and TDDFT Simulations

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Mosaic Structure Evolution in Gan Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition