Abstract:The influence of AlN buffer growth temperature on the quality and stress of 4.5μm GaN epilayer on 6H–SiC substrate by organometallic vapor phase epitaxy (MOVPE) has been investigated. The crystalline quality and the atomic surface morphology were improved, the density of the pits and the stress of the GaN epilayer were reduced by increasing the growth temperature of the AlN buffer in the range from 950°C to 1100°C. By employing the optimized 1100°C growth temperature of AlN buffer, very high quality of GaN epilayer was achieved. The X-ray full width of half maximums (FWHMs) of (002) and (102) reflection rocking curves of the GaN epilayer have been improved to 159arcsec and 194arcsec, respectively, and the surface RMS to only 0.31nm in the 5μm×5μm atomic force microscopy (AFM) scan. The stress of GaN epilayer was investigated by X-ray diffraction and Raman scattering as well. The degree of the tensile stress in GaN epilayer could be suppressed by increasing the growth temperature of AlN buffer. Finally, a high quality of crack-free 4.5μm thick GaN epilayer was obtained on 6H–SiC substrate using the optimized 1100°C AlN growth temperature.

Microstructure Evolution in Metal-organic Vapor Phase Epitaxy-Grown GaN with Different Low-Temperature Buffer Layer Annealing Time

Mosaic Structure Evolution in Gan Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

Properties of low-temperature-deposited GaN buffer layers

Characterization of GaN Buffer Layers and Its Epitaxial Layers Grown by MOCVD

The Surface Morphology Evolution of GaN Nucleation Layer during Annealing and Its Influence on the Crystal Quality of GaN Films

Microstructure analysis on buffer layer in GaN/MgAl2O4

Optimization of Two-step AlN Buffer of A-Plane GaN Films Grown on R-Plane Sapphire by MOCVD

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

High-resolution XRD study of the effect of the annealing time on strain in Mg doped p-type GaN epitaxial films

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

The Effect of Low Temperature GaAs Nucleation on the Growth of GaN on Silicon (001) During MOVPE Process

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Low-temperature and Global Epitaxy of GaN on Amorphous Glass Substrates by Molecular Beam Epitaxy Via a Compound Buffer Layer

Influence of Double Aln Buffer Layers on the Qualities of Gan Films Prepared by Metal-Organic Chemical Vapour Deposition

The Dependence of Growth Rate of GaN Buffer Layer on Growth Parameters by Metalorganic Vapor-Phase Epitaxy

Evolution of Nanomicro Structures on GaAs (001) Surface under High Temperature Evaporation

Influence of the Growth Temperature of AlN Buffer on the Quality and Stress of GaN Films Grown on 6h–sic Substrate by MOVPE

Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of a -Gan Films Grown on R -Plane Sapphire Substrates by MOCVD

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates