Growth and Study on Defects of LSO:Ce Scintillation Crystal

Huan Li
2004-01-01
Abstract:In this paper Lu_2SiO_5:Ce(LSO) scintillation crystal grown by Czochralski method is reported and growing difficulties are discussed.Then macro-defects including crack,cleavage, polycrystal and remelting and micro-defects including inclusions and dislocation in LSO crystal were found, and the origin of defects was simply analyzed. The cracking of crystal is caused by both thermal stress and cleavage.The thermal stress is considered to be the main factor. By setting the preferred growth condition, LSO crystal free from cracks was successfully grown. There were two types of inclusions, whose components are respectively Lu_2O_3 and Ir.The inclusions of Ir come from the crucible and inclusions of Lu_2O_3 maybe come from the raw material Lu_2O_3 not reacting. It also probably resulted from SiO_2.
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