Abstract:Heteroepitaxy of gallium oxide (Ga2O3) is gaining popularity to address the absence of p-type doping, limited thermal conductivity of Ga2O3 epilayers, and toward realizing high-quality p-n heterojunction. During the growth of β-Ga2O3 on 4H-SiC (0001) substrates using metal-organic chemical vapor deposition, we observed formation of incomplete, misoriented particles when the layer was grown at a temperature between 650 °C and 750 °C. We propose a thermodynamic model for Ga2O3 heteroepitaxy on foreign substrates which shows that the energy cost of growing β-Ga2O3 on 4H-SiC is slightly lower as compared to sapphire substrates, suggesting similar high-temperature growth as sapphire, typically in the range of 850 °C-950 °C, that can be used for the growth of β-Ga2O3 on SiC. A two-step modified growth method was developed where the nucleation layer was grown at 750 °C followed by a buffer layer grown at various temperatures from 920 °C to 950 °C. 2θ-ω scan of X-ray diffraction (XRD) and transmission electron microscope images confirm the β-polymorph of Ga2O3 with dominant peaks in the (-201) direction. The buffer layer grown at 950 °C using a "ramp-growth" technique exhibits root-mean-square surface roughness of 3 nm and full width of half maxima of XRD rocking curve as low as 0.79°, comparable to the most mature β-Ga2O3 heteroepitaxy on sapphire, as predicted by the thermodynamic model. Finally, the interface energy of an average Ga2O3 island grown on 4H-SiC is calculated to be 0.2 J/m2 from the cross-section scanning transmission electron microscope image, following the Wulff-Kaishew theorem of the equilibrium island shape.

Growth of LiGaO2 as a Substrate of GaN by Temperature Gradient Technique

Study on the Growth of Pure and Ga3+ Doped γ-LiAlO2 Crystals

The Surface Tension of Ga2O3 Melt Measured by a Drop-Weight Method in an Optical Floating-Zone Furnace

Study on Large-size γ-LiAlO2 Single Crystal Grown by Czochralski Technique

A Study on a Two-Step Technique of Growing Ga2O3/ZnO Films Ammoniated at Different Temperatures

Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Low-temperature homoepitaxial growth of β-Ga2O3 thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Structural Properties of Β-Ga2o3 Formed by Dry Thermal Oxidization Process on GaN

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Structural, optical and morphological evolution of Ga2O3/Al2O3 (0001) films grown at various temperatures by pulsed laser deposition

Two-step growth of m-plane GaN epilayer on LiAlO2 (1 0 0) by metal-organic chemical vapor deposition

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

Effects of Growth Temperature on Phase Transformation and Crystal Quality of Ga2O3 Films Grown on Si/AlN Composite Substrates by MOCVD

High-throughput thermodynamic analysis of epitaxial growth of β-Ga2O3 by the chemical vapor deposition method from TMGa-H2O system

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Dielectric properties of low-temperature-grown homoepitaxial (−201) β-Ga2O3 thin film by atmospheric pressure plasma-assisted CVD