Abstract:Heteroepitaxy of gallium oxide (Ga2O3) is gaining popularity to address the absence of p-type doping, limited thermal conductivity of Ga2O3 epilayers, and toward realizing high-quality p-n heterojunction. During the growth of β-Ga2O3 on 4H-SiC (0001) substrates using metal-organic chemical vapor deposition, we observed formation of incomplete, misoriented particles when the layer was grown at a temperature between 650 °C and 750 °C. We propose a thermodynamic model for Ga2O3 heteroepitaxy on foreign substrates which shows that the energy cost of growing β-Ga2O3 on 4H-SiC is slightly lower as compared to sapphire substrates, suggesting similar high-temperature growth as sapphire, typically in the range of 850 °C-950 °C, that can be used for the growth of β-Ga2O3 on SiC. A two-step modified growth method was developed where the nucleation layer was grown at 750 °C followed by a buffer layer grown at various temperatures from 920 °C to 950 °C. 2θ-ω scan of X-ray diffraction (XRD) and transmission electron microscope images confirm the β-polymorph of Ga2O3 with dominant peaks in the (-201) direction. The buffer layer grown at 950 °C using a "ramp-growth" technique exhibits root-mean-square surface roughness of 3 nm and full width of half maxima of XRD rocking curve as low as 0.79°, comparable to the most mature β-Ga2O3 heteroepitaxy on sapphire, as predicted by the thermodynamic model. Finally, the interface energy of an average Ga2O3 island grown on 4H-SiC is calculated to be 0.2 J/m2 from the cross-section scanning transmission electron microscope image, following the Wulff-Kaishew theorem of the equilibrium island shape.

High-throughput thermodynamic analysis of epitaxial growth of β-Ga2O3 by the chemical vapor deposition method from TMGa-H2O system

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD

Low-temperature homoepitaxial growth of β-Ga2O3 thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique

Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Low Temperature Homoepitaxy Of (010) $β$-Ga$_2$O$_3$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Epitaxial Growth of Ga2O3: A Review

Temperature Dependence of $β-Ga_2O_3$ Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Epitaxial growth of β-Ga2O3 thin films on SrTiO3 (1 1 1) and (1 0 0) substrates by chemical vapor deposition

Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy

Effect of epitaxial growth rate on morphological, structural and optical properties of β-Ga2O3 films prepared by MOCVD

Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

Dielectric properties of low-temperature-grown homoepitaxial (−201) β-Ga2O3 thin film by atmospheric pressure plasma-assisted CVD