Abstract:InN materials have been attracting a lot of attention for its prominent application in electronic and optical devices,compared with GaN and AlN,InN has smaller effective mass and higher electron drift velocity.However,the growth difficulties due to low growth temperature and lack of lattice-matched substrate restricted the evolution of InN-based devices,more and more efforts are made in efficiently deposit InN films with better quality.InN films were synthesized on the(0001) sapphire substrates at different growth temperatures by metal organic chemical vapor deposition(MOCVD),the growth source materials are trimethylindium(TMI),trimethylgallium(TMG) and ammonia(NH3).The physical properties of the films were characterized by a series of measurements.We fully studied the characteristic of InN films by various methods,such as X-ray diffraction(XRD),atomic force microscope(AFM),X-ray photoelectron spectroscopy(XPS) and Raman measurements.It's well known that the growth temperature is one of the most important parameters in growth of InN films,so in our study,we focus our attention mainly on the effect of growth temperature.It was found that 600 ℃ is a suitable growth temperature for InN films,the suitable temperature can inhibit the surface segregation phenomenon of In on the surface of InN films.But at a lower or higher temperature it will lead to a surface segregation of In on the InN films.The crystalline quality and morphology of the surface for the sample without surface segregation have been improved compared with the samples with surface segregation.In addition,it was also found that the residual strain in InN films increased with increasing growth temperature by Raman analysis,the E2(high) model frequency shift toward high frequency with increasing growth temperature,and this shift is due to the presence of residual thermal strain in the InN film.When the growth temperature is lower,the residual thermal strain came into being due to the different thermal expand coefficient between the epitaxial-film and the sapphire substrate.The residual thermal strain is biaxial strain,which can be expressed as:εxx=(Tg-Tr)(αsub-αfilm),Tg,Tr are the growth and room temperature,αsub,αfilm are the thermal expand coefficient of sapphire substrate and InN film,respectively.The relation between E2(high) model frequency and residual thermal strain can be expressed as:ω=20εxx+479(cm-1),which fit from the result of Raman analysis,where ω is the E2(high) model frequency,and εxx is the residual biaxial thermal strain.

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High Quality InAlN/GaN Heterostructures Grown on Sapphire by Pulsed Metal Organic Chemical Vapor Deposition

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Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition

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Suppression of phase separation in InGaN layers grown on lattice-matched ZnO substrates

Anomalous Indium Incorporation and Optical Properties of High Indium Content InGaN Grown by MOCVD

Characteristics of High In-Content InGaN Alloys Grown by MOCVD

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Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Optical, Surface, and Structural Studies of InN Thin Films Grown on Sapphire by Molecular Beam Epitaxy

Study on In Segregation in InN Films Grown by Metal-organic Chemical Vapor Deposition

Comparative Study on MOCVD Growth of a -Plane GaN Films on r -Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers