Abstract:The alloy AlxGa1−xN was grown by metal-organic chemical vapor deposition (MOCVD) using a high-temperature AlN interlayer on a thick GaN template. The Al composition (x) of the AlxGa1−xN was varied in the range 0.13⩽x⩽0.8. The in-situ reflectance spectra indicate that the growth process of AlGaN alloys is dominated by trimethylgallium (TMGa) molar flux when the molar flux of trimethylaluminium (TMAl) is kept constant. The Al compositions and growth rates of AlGaN alloys were determined by Rutherford backscattering, which indicates that the incorporation efficiency of TMAl is improved remarkably by decreasing the TMGa molar flux. The crystalline quality of these AlGaN alloys is evaluated by measuring the symmetric (002) and asymmetric (102) ω-scan X-ray diffraction peak widths. The best crystalline quality, among these AlxGa1−xN alloys, is for an Al composition of x=0.54 where the full-width at half-maximums of the AlGaN (002) and (102) diffraction peaks are 265 and 797arcsec, respectively. This conclusion is consistent with the surface morphology of the AlGaN alloys probed by atomic force microscopy. Room temperature cathodoluminescence spectra show pronounced near band edge emission from these AlGaN alloys. The optical band gaps (Eg) are found to deviate from linear interpolation between EgGaN and EgAlN with a bowing parameter b=0.89.

High Al-content AlInGaN Epilayers with Different Thicknesses Grown on GaN/sapphire Templates

Growth of High Al Content AlGaN Epilayer by MOCVD

Structural and Optical Properties of Al 1-X in X N Epilayers on GaN Template Grown by Metalorganic Chemical Vapor Deposition

Growth of InGaN Films on C-Plane Sapphire Substrates with an AlN Nucleation Layer by Using Metal-Organic Chemical-Vapor Deposition

Study on Growing Thick AlGaN Layer on C-Plane Sapphire Substrate and Free-Standing GaN Substrate

Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Growth and Characteristics of Epitaxial Al X Ga 1− X N by MOCVD

Morphology And Microstructure Evolution Of Alxga1-Xn Epilayers Grown On Gan/Sapphire Templates With Aln Interlayers Observed By Transmission Electron Microscopy

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Anomalous Indium Incorporation and Optical Properties of High Indium Content InGaN Grown by MOCVD

An X-ray diffraction and Raman spectroscopy investigation of AlGaN epi-layers with high Al composition

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Characteristics of High Al Content AlxGa1−xN Grown by Metalorganic Chemical Vapor Deposition

Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers

Characteristics of High In-Content InGaN Alloys Grown by MOCVD

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Growth Temperature Effect on the Optical and Material Properties of AlxInyGa1−x−yN Epilayers Grown by MOCVD

High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Effect of Growth Temperature of Initial AlN Buffer on the Structural and Optical Properties of Al-rich AlGaN