Abstract:GaN has shown great potential for high-power high-frequency electronic devices and short-wavelength optical devices. To integrate GaN-based optoelectronic devices with Si-based electronic devices and reduce the cost, it is desirable to grow epitaxial GaN thin films and device structures on the Si substrate. However, a proper buffer layer is essential for epitaxial growth of GaN films on Si substrate due to large mismatch between them in the area of lattice constant, thermal expansion coefficient and chemistry feature. In the present work, the growth of AlN buffer layer was studied. Wurtzite aluminum nitride thin films were grown on Si (111) and Si (100) substrates using reactive sputtering deposition under different discharge powers. X-ray diffraction (XRD) patterns showed that full width at half maximum (FWHM) of AlN (0002) peak grown on Si (111) substrates was smaller than that grown on Si (100) substrates. Vibrational characterization by Fourier transform infrared spectroscopy (FTIR) revealed that the stress in the AlN films deposited on Si (111) substrates was also smaller than that deposited on Si (100) substrates. For Si (100) substrates, the large lattice mismatch between AlN (0001) and Si (100) is a main contribution to the large strain in the formed films. For Si (111) substrates, the strain in the films deposited on Si (111) largely depends on the discharge power in sputtering, and the strain due to defects and thermal mismatch contributes largely to the residual strain in the deposited films.

Growth of High-Quality AlGaN Epitaxial Films on Si Substrates

Epitaxial Growth of High Quality AlN Films on Si Substrates

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Growth of High-Quality AlN Epitaxial Film by Optimizing the Si Substrate Surface

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

High-Quality AlN Grown on Si(111) Substrate by Epitaxial Lateral Overgrowth

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Growth of AlGaN Film on Si (111) Substrate

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Growth of AlN Films on Si ( 100 ) and Si ( 111 ) Substrates by Reactive Magnetron Sputtering

High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates