Abstract:Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 μm wavelength window with picosecond response times. Incorporating nanowires as active media could enable an independent control over the electrical cross-section of the device and the optical absorption cross-section. Furthermore, the three-dimensional carrier confinement in nanowire heterostructures opens new possibilities to tune the carrier relaxation time. However, the generation of structural defects and the surface sensitivity of GaAs nanowires have so far hindered the fabrication of nanowire intersubband devices. Here, we report the first demonstration of intersubband photodetection in a nanowire, using GaN nanowires containing a GaN/AlN superlattice absorbing at 1.55 μm. The combination of spectral photocurrent measurements with 8-band k·p calculations of the electronic structure supports the interpretation of the result as intersubband photodetection in these extremely short-period superlattices. We observe a linear dependence of the photocurrent with the incident illumination power, which confirms the insensitivity of the intersubband process to surface states and highlights how architectures featuring large surface-to-volume ratios are suitable as intersubband photodetectors. Our analysis of the photocurrent characteristics points out routes for an improvement of the device performance. This first nanowire based intersubband photodetector represents a technological breakthrough that paves the way to a powerful device platform with potential for ultrafast, ultrasensitive photodetectors and highly efficient quantum cascade emitters with improved thermal stability.

Normal Incidence Intersubband Absorption in GaN/AlN Superlattices Grown on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors

Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires

1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices

Normally Incident Infrared Absorption in Vertically Aligned Ingaas/Gaas Quantum Dot Superlattice

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Intersubband Absorption Properties of High Al Content Al X Ga 1− X N/GaN Multiple Quantum Wells Grown with Different Interlayers by Metal Organic Chemical Vapor Deposition

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Growth and characterization of AlInN/GaN superlattices

Crack-free GaN-based ultraviolet multiple quantum wells structures grown on AlN/2° misoriented sapphire template

Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Intersubband Transition in AlGaN/GaN Step Quantum Wells at 3–5 Μm

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

Enhanced Pockels Effect in GaN∕AlxGa1−xN Superlattice Measured by Polarization-Maintaining Fiber Mach-Zehnder Interferometer

Normal Incidence Silicon Doped P-Type Gaas/Algaas Quantum-Well Infrared Photodetector on (111)A Substrate

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Near-Infrared Wavelength Intersubband Transitions In Gan/Aln Short Period Superlattices