Abstract:GaN is considered as a promising material for high power,high temperature and high frequency microwave applications,due to the wide band gap,high thermal stability and high breakdown voltage.Due to lack of suited homosubstrates,GaN is currently grown on heterosubstrates where SiC is the most popular choice for commercial applications.However,it is difficult to obtain high quality GaN because of the 33.1% mismatch of thermal expansion coefficients and the large lattice mismatch(3.5%) between GaN and SiC.In this paper,GaN epitaxial layers were grown on 6H-SiC substrates by metalorganic chemical vapor deposition.Samples employing high temperature AlN as buffer layers produce high quality GaN epitaxial layers. Five samples with different AlN buffer layers were prepared.The effects of the growth parameters of AlN buffer layers on characterizations of GaN were studied.The highest quality GaN layer grown on SiC substrate with AlN buffer was obtained by optimizing the growth parameters of the AlN buffer.The full width at half maximum of High-resolution X-ray diffraction on-axis(0002) and off-axis(1012) diffraction are 130 arcsec and 252 arcsec,respectively.The values are the best result of GaN grown on homemade 6H-SiC.The quality of GaN layers will be deteriorated by increasing the thickness or the growth Ⅴ/Ⅲ ratio of AlN buffer layers,while the low growth temperature of AlN buffers also deteriorate the quality of GaN layers.The strain in GaN also has been studied.It is found that the GaN layer with narrow XRC FWHM has less stress intensity.

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

Unintentionally Doped Semi-Insulating GaN with a Low Dislocation Density Grown by Metalorganic Chemical Vapor Deposition

High Resistivity GaN Film Grown by MOCVD

Unintentionally Doped High Resistivity GaN Layers with an InGaN Interlayer Grown by MOCVD

Normal Incidence Intersubband Absorption in GaN/AlN Superlattices Grown on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

MOCVD-grown High-Mobility Al0.3Ga0.7N/AlN/GaN HEMT Structure on Sapphire Substrate

Study of N-polar GaN Growth with a High Resistivity by Metal-Organic Chemical Vapor Deposition

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Control of Residual Carbon Concentration in GaN High Electron Mobility Transistor and Realization of High-Resistance GaN Grown by Metal-Organic Chemical Vapor Deposition

Ultrathin Barrier Layer AlN/GaN HEMTs Grown by Molecular Beam Epitaxy

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Growth and Characterization of AlGaN/GaN Heterostructure Using Unintentionally Doped AlN/GaN Superlattices As Barrier Layer

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer As Channel on SiC

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts