Abstract:The realization of p-type conduction in GaN and commercialized GaN light-emitting diodes (LED) is accepted as an advance in the development of human society. Conventionally, LED is based on PN junction and the quantum wells are introduced for confining electrons and holes, which improves the external quantum efficiency (EQE). Herein, we realized a graphene/AlGaN/GaN LED emitting double peaks at 430 nm and 560 nm. The blue peak at 430 nm is originated from the recombination process between holes injected from graphene/AlGaN heterostructure and electron produced from the tunnelling and avalanche multiplication process in p-type AlGaN/p-type GaN interface. Compared with the bare p-type AlGaN/GaN heterostructure without blue light emission, the graphene/p-AlGaN enhances the hole injection process through the band gap alignment and the mediate thickness of p-AlGaN is important taking the hole transport in AlGaN into consideration. The AlGaN/GaN interface confines the produced electrons and thus result in a high EQE of 55.8% under 5 mA current after intercalating an Al2O3 barrier at the interface between graphene and AlGaN/GaN. Moreover, the tunable graphene/AlGaN/GaN LED with different intensity of 430 nm has been demonstrated through changing the Fermi level of graphene by gating effect. The graphene/AlGaN heterostructure induced confinement effect can bring a novel type of LED, which can be optimized for special applications.

Enhanced Performance of GaN Based Light-Emitting Diodes with a Low Temperature P-Gan Hole Injection Layer

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer

Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Improved ESD Characteristic of GaN-based Blue Light-Emitting Diodes with a Low Temperature N-Type GaN Insertion Layer

Enhancing the Performance of Blue GaN-based Light Emitting Diodes with Double Electron Blocking Layers

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

n+/p+ GaN and n+/p+ Al0.10Ga0.90N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes

On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes

Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier

Improvement of Electrostatic Discharge Characteristics of InGaN/GaN MQWs Light-Emitting Diodes by Inserting an N+-Ingan Electron Injection Layer and a P-Ingan/gan Hole Injection Layer

Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Optimized Growth of P-Type Algan Electron Blocking Layer in the Gan-Based Led

Enhanced luminescence property of GaN-based LEDs with p-InGaN cap layer grown on p-GaN surface

Polarization Modification In Ingan/Gan Multiple Quantum Wells By Symmetrical Thin Low Temperature-Gan Layers