Abstract:The performance of AlGaN-based light-emitting diodes (LEDs) emitting at UVAUVC regions can be severely compromised due to the polarization difference (P) between the last quantum barrier (LQB) and the electron blocking layer (EBL). In this work, the different situations of the bandgap difference (Eg) and P of InAlNAlGaN and AlGaNAlGaN heterojunctions fully strained on GaN and AlN substrates are discussed. It shows that the InAlNAlGaN heterojunctions could produce positive or negative sheet charges at the heterointerface under Eg >0, which could not be realized by the conventional AlGaNAlGaN heterojunctions. To demonstrate and utilize the feature, the polarization-modulated InAlN LQBs with 0.140.16 indium compositions of 320 nm UVB LEDs are designed and investigated. It is observed that the InAlN LQBs could replace the conventional AlGaN LQB to improve electron confinement and hole injection by affecting effective barrier heights. By modulating the LQBEBL polarization using InAlN, the proposed UV LED has a 32 enhancement in internal quantum efficiency and lower efficiency droop (from 16.9 to 0.7) compared with the conventional one without modulation. The operation voltage at the same current also significantly decreases. The improvement of optical output power and wall plug efficiency at 60 mA in proposed structures are near 90 and 100, respectively. This study provides a novel and highly effective methodology for development of high efficiency UV LEDs.

Theoretical Study of Polarization Effect for AlGaN Ultraviolet LEDs with Different Al Composition

Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-rich AlGaN/AlN Quantum Wells

Polarization effect's impact on luminous efficiency in InGaN/AlGaN MQWs LED

Numerical study of polarization-doped AlGaN ultraviolet light-emitting diodes

AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes with Polarization Doping

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Band Engineering for Surface Emission Enhancement in Al-rich AlGaN-based Deep-Ultraviolet Light Emitting Diodes

Surface Emission Enhancement for Deep Ultraviolet AlGaN-based LEDs Using Triangular Shaped Quantum Wells

Performance Enhancement of AlGaN-based Ultraviolet Light-Emitting Diodes by Tailoring Polarization in Electron Blocking Layer

Enhancement of Optical Polarization Degree of AlGaN Quantum Wells by Using Staggered Structure.

Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells

Depth profiled polarization effects in AlGaN quantum wells probed with interconnected cathodoluminescence spectroscopy and ion sputtering

Enhancement of Surface Emission in Deep Ultraviolet AlGaN-based Light Emitting Diodes with Staggered Quantum Wells

Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters

Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

Compressive Strain Induced Enhancement of Transverse-Electric Polarized Ultraviolet Light Emission for AlGaN Quantum Wells

Anisotropic Dependence of Light Extraction Behavior on Propagation Path in AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

Strain Effect on the Optical Polarization Properties of C-Plane Al_026Ga_074N/GaN Superlattices

Enhanced Performance of N-polar AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

Effect of Polarization on Intersubband Transition in AlGaN/GaN Multiple Quantum Wells