High-performance solar-blind photodetector of β-Ga 2 O 3 grown on sapphire with embedding an ultra-thin AlN buffer layer
Zhe Wu,Yuefei Wang,Youheng Song,Shihao Fu,Weizhe Cui,Chong Gao,Danyang Xia,Yurui Han,Bingsheng Li,Aidong Shen,Yichun Liu
DOI: https://doi.org/10.1016/j.jallcom.2024.176156
IF: 6.2
2024-08-28
Journal of Alloys and Compounds
Abstract:The authors reported the MOCVD growth of high-quality β-Ga 2 O 3 on c-plane sapphire substrate, resulting in the achievement of high performance solar blind deep UV photodetectors by introducing an ultra-thin AlN buffer seed layer (BSL). Compared with the direct growth of Ga 2 O 3 on the sapphire, the oxygen vacancy of β-Ga 2 O 3 is reduced after introducing an AlN BSL and the full width at half maximum (FWHM) of (-201) diffraction peak becomes narrower. The dark current is reduced by 1000 times and from 10 − 10 A down to 10 − 13 A for the metal-semiconductor-metal planner photodetector of β-Ga 2 O 3 thin film with the AlN BSL. And the detectivity reaches 4.65×10 15 cm·Hz 1/2 ·W at 5 V bias. This improvement in performance is derived from the improvement of the growth quality of β-Ga 2 O 3 mediated by the AlN BSL due to the decrease of lattice mismatch. The defects in β-Ga 2 O 3 are reduced, the carrier concentration is reduced, the Fermi level is shifted, the depletion region is widened, the probability of electron tunneling in the dark state is reduced, and the dark current is effectively reduced.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering