Abstract:Semiconductor quantum dots (QDs) have unique discrete energy levels determined by the particle size and material. Therefore, they have potential applications as novel optical and electronic devices. Among those, colloidal group II-VI semiconductor quantum dots stand out for their facile synthesis and band gaps aligned with the visible light spectrum. However, the electrical characterization studies of an individual quantum dot necessitate the size of nanogap electrodes being equal to the size of the quantum dot, which has conventionally been evaluated using techniques such as scanning tunneling microscopy (STM) and nanogaps fabricated by electromigration. The complexity of device fabrication has restricted research in this area. Here, we present a pioneering approach for the electrical characterization of single-QD: heteroepitaxial-spherical (HS) Au/Pt nanogap electrodes. We fabricated transistors through chemisorption, an anchoring colloidal CdS QD (3.8 nm) between the HS-Au/Pt nanogap electrodes (gap separation: 4.5 nm). The resulting device functions as a quantum-dot single-electron transistor (QD-SET), showing resonant tunneling-an inherent characteristic of the QD. A steep current increase was observed at a negative voltage, apart from the theoretical single-electron tunneling current by Coulomb blockade phenomena, which agreed with the theoretical resonant tunneling current through a discrete energy level of the QD. This underscores the promise of HS-Au/Pt nanogap electrodes in realizing single-QD devices, offering a pathway toward unlocking their full potential.

Metastable Excited States of a Closed Quantum Dot Probed by an Aluminum Single-Electron Transistor

Metastable Excited States of a Closed Quantum Dot with High Sensitivity to Infrared Photons

Observation of excited states in a p-type GaAs quantum dot

Observation of Quantum Fluctuations of Charge on a Quantum Dot

Correlated Electron Transport Through Parallel Double-Quantum-dot

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Transient current spectroscopy of a quantum dot in the Coulomb blockade regime

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Metastable state involved resonant tunneling through single InAs/GaAs quantum dot

Microwave-Resonator-Detected Excited-State Spectroscopy of a Double Quantum Dot

A quantitative study of spin-flip co-tunneling transport in a quantum dot

Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor

Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study

Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot

Temperature-Stable Tunneling Current in Serial Double Quantum Dots: Insights from Nonequilibrium Green Functions and Pauli Spin Blockade

Transient Process of Transport Through a Quantum Dot in a Stepped Bias: a Numerical Approach

Quantum Interference and Coherent Population Trapping in a Double Quantum Dot

Resonant tunneling in a colloidal CdS semiconductor quantum-dot single-electron transistor based on heteroepitaxial-spherical Au/Pt nanogap electrodes

Exciton Transport in a Germanium Quantum Dot Ladder

Real Time Electron Tunneling and Pulse Spectroscopy in Carbon Nanotube Quantum Dots