Abstract:Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explicitly in space with 15 million atom structures. An excited state spectroscopy technique is presented in which the externally applied electric field is swept to probe the ladder of the electronic energy levels (electron or hole) of one quantum dot through anti-crossings with the energy levels of the other quantum dot in a two quantum dot molecule. This technique can be applied to estimate the spatial electron-hole spacing inside the quantum dot molecule as well as to reverse engineer quantum dot geometry parameters such as the quantum dot separation. Crystal deformation induced piezoelectric effects have been discussed in the literature as minor perturbations lifting degeneracies of the electron excited (P and D) states, thus affecting polarization alignment of wave function lobes for III-V Heterostructures such as single InAs/GaAs quantum dots. In contrast this work demonstrates the crucial importance of piezoelectricity to resolve the symmetries and energies of the excited states through matching the experimentally measured spectrum in an InGaAs quantum dot molecule under the influence of an electric field. Both linear and quadratic piezoelectric effects are studied for the first time for a quantum dot molecule and demonstrated to be indeed important. The net piezoelectric contribution is found to be critical in determining the correct energy spectrum, which is in contrast to recent studies reporting vanishing net piezoelectric contributions.

Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot

Back-Action-Driven Electron Spin Excitation in A Single Quantum Dot

Electron Spin Excited States Spectroscopy in a Quantum Dot Probed by QPC Back-action

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Tuning Quantum Dot States with Optical Fields

Population Dynamics and Photon Emission Statistics of the Coupled Semiconductor Quantum Dots Driven by Pulse Field

Detection And Measurement Of Spin-Dependent Dynamics In Random Telegraph Signals

Stimulated and Spontaneous Optical Generation of Electron Spin Coherence in Charged GaAs Quantum Dots

Detector-induced Backaction on the Counting Statistics of a Double Quantum Dot.

Enhanced Readout of Spin States in Double Quantum Dot

Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot

Deterministic preparation of spin qubits in droplet etched GaAs quantum dots using quasi-resonant excitation

Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation

Metastable Excited States of a Closed Quantum Dot Probed by an Aluminum Single-Electron Transistor

Back-action-induced non-equilibrium effect in electron charge counting statistics

Microwave-Resonator-Detected Excited-State Spectroscopy of a Double Quantum Dot

Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Unravelling Quantum Dot Array Simulators Via Singlet-Triplet Measurements

Transport spectroscopy of non-equilibrium many-particle spin states in self-assembled quantum dots

Triplet-singlet relaxation in semiconductor single and double quantum dots